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Process for machining monocrystalline silicon alkali corrosion wafer with large-corrosion texture

A single-crystal silicon alkali corrosion sheet and processing technology, which is applied in the directions of crystal growth, post-processing details, post-processing, etc., can solve the problems of difficult lithography focusing, poor surface condition of the etched sheet, etc., so as to overcome the difficulty of lithography focusing. Effect

Inactive Publication Date: 2012-04-18
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

By adjusting the alkali etching process, realize the single crystal silicon alkali corrosion sheet with a large corrosion pattern above 0.3mm, so as to solve the problem of poor surface condition of the etching sheet and the difficulty of focusing in photolithography, so as to adapt to the replacement of single crystal silicon etching sheet The development trend of silicon polished wafer or epitaxial wafer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1: Take 30% KOH or NaOH and deionized water by weight percentage to prepare an alkali corrosion solution; the corrosion temperature is 85° C.; the corrosion time is 120 minutes.

Embodiment 2

[0015] Example 2: Take 30% KOH or NaOH and deionized water by weight percentage to prepare an alkali corrosion solution; the corrosion temperature is 110° C.; the corrosion time is 107 minutes.

Embodiment 3

[0016] Example 3: Take 30% KOH or NaOH and deionized water by weight percentage to prepare an alkali corrosion solution; the corrosion temperature is 120° C.; the corrosion time is 92 minutes.

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PUM

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Abstract

The invention relates to a method for producing corrosion silicon wafer, in particular to a process for machining a monocrystalline silicon alkali corrosion wafer with large-corrosion texture. The process comprises the following steps of: (1) preparing an alkali corrosion solution, namely preparing the alkali corrosion solution from 30 to 60 weight percent of KOH or NaOH and deionized water; (2) performing corrosion at the temperature of between 85 and 120 DEG C; (3) performing the corrosion for 15 minutes to 2 hours; and (4) removing corrosion amount by 25 to 35 micrometers. The process has the advantages that: after the alkali corrosion process is adjusted, the large-corrosion texture monocrystalline silicon alkali corrosion wafer with over 0.3 millimeter of corrosion texture is prepared successfully; and a beneficial attempt is made for reducing the manufacturing cost of a semiconductor by replacing a monocrystalline silicon polished wafer or a monocrystalline silicon epitaxial wafer with the monocrystalline silicon corrosion wafer, so that the defects of the sinking of granules into the monocrystalline silicon corrosion wafer and difficulty in photoetching focusing are overcome, and market demands are met.

Description

technical field [0001] The invention relates to a method for producing single crystal silicon wafers, in particular to a processing technology for single crystal silicon alkali etching wafers with large etching patterns. Background technique [0002] In order to reduce the cost of semiconductor raw materials, semiconductor manufacturers are gradually trying to replace wafers with other raw materials such as thin films while choosing larger and thinner wafers; similarly, they are also trying to replace monocrystalline silicon with monocrystalline silicon etching sheets Polished or epitaxial wafers. However, there are still certain problems in the direct use of etched sheets for the manufacture of semiconductor devices. For example, if the surface of the etched sheet is not in good condition, there will be particles that cannot be cleaned in the subsequent cleaning process, which may reduce the yield of semiconductor devices. In addition, due to The glossiness of etched wafer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06C23F1/40
Inventor 张俊生李满刘沛然黄建国
Owner TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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