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Method for forming high-order electric constant K and T-shaped metal grid

A technology of metal gate and metal gate material, which is used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of blocked contact holes and difficult etching of contact holes, and achieve the effect of reducing costs.

Active Publication Date: 2012-05-02
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The N-type well and the P-type well used to solve the problem of complementary metal oxide semiconductors in the prior art have an overlapping area, and the etching barrier layer nitride of the N-type well and the P-type well in the overlapping area forms two overlapping layers, and the opposite The contact hole in the overlapping area of ​​the N-type well and the P-type well poses great difficulties to the subsequent contact hole etching, and easily leads to the problem of contact hole failure.

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  • Method for forming high-order electric constant K and T-shaped metal grid
  • Method for forming high-order electric constant K and T-shaped metal grid
  • Method for forming high-order electric constant K and T-shaped metal grid

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Embodiment Construction

[0033] In order to make the technical means, creative features, objectives and effects of the invention easy to understand, the present invention will be further elaborated below in conjunction with specific diagrams.

[0034] Please see Figures 1 to 11 As shown, a method for forming a high-order dielectric constant K and T-shaped metal gate includes: a shallow trench isolation region that has been made, and a MOS transistor is arranged on the silicon substrate of the shallow trench isolation region, and the MOS transistor It includes a gate stack 1, a gate spacer 2, a dielectric 3, a high dielectric constant material 6, a source 4 and a drain 5, and the lower surface of the gate stack 1 is provided with a high dielectric constant material 6, so Both sides of the gate stack 1 are provided with a gate spacer 2, and both sides of the gate spacer 2 are provided with a dielectric 3, and the two ends of the lower surface of the dielectric 3 are respectively provided with a source ...

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Abstract

The invention provides a process method for treating mist particles on the surface of a high phosphorus concentration phosphor silicate glass (PSG) film. The method comprises a step of forming a metal grid material into a T-shaped metal grid. By adoption of a method for forming a high-order electric constant K and the T-shaped metal grid, high grid leakage current caused by the decrease of the medium thickness of a polysilicon gate oxide layer in the reducing process of the conventional complementary metal-oxide-semiconductor (CMOS) device is effectively avoided, and simultaneously a layer of photomask is reduced; and thus, the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of a semiconductor integrated circuit and its manufacture, in particular to a method for forming a high-order electrical constant K and T-shaped metal gate. Background technique [0002] In the semiconductor manufacturing process, the main device in an integrated circuit, especially a VLSI, is a metal oxide semiconductor field effect transistor (MOS transistor for short). Since the MOS tube was invented, its geometric size has been shrinking continuously. At present, the geometric feature size of the MOS tube itself has entered the range of 45nm. At this size, various practical and fundamental limitations and technical challenges begin to emerge, and it is becoming more and more difficult when the device size needs to be further reduced. Among them, in the preparation of MOS transistor devices and circuits, the most challenging is the high gate leakage current caused by the reduction of the dielectric thick...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/283
Inventor 周军
Owner SHANGHAI HUALI MICROELECTRONICS CORP