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Method for simplifying double pattern exposure process of side wall definition

A pattern exposure and sidewall technology, which is applied in the photoengraving process, optics, optomechanical equipment and other directions of the pattern surface, can solve the problems of reducing the yield of the device, the sidewall cannot be defined, and the process cost is increased, so as to improve the quality of the product. efficiency, reduce costs, and simplify the process

Active Publication Date: 2014-06-04
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the sidewall can only define a single width size (the smallest size), so, for those non-core patterns, that is, patterns with relatively large pitch and size, the sidewall cannot be defined, that is, the third photolithography must be used. Definition, correspondingly increases the cost of the process and reduces the yield of the device

Method used

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  • Method for simplifying double pattern exposure process of side wall definition
  • Method for simplifying double pattern exposure process of side wall definition
  • Method for simplifying double pattern exposure process of side wall definition

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Embodiment Construction

[0020] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0021] Such as Figure 14-25 As shown, the present invention discloses a method for simplifying the double pattern exposure process of sidewall definition. First, a lower dielectric layer 202 and an interlayer insulating layer 203 are sequentially deposited on the substrate 201 from bottom to top; After the hard mask sacrificial layer 204 is deposited on the inter-insulation dielectric layer 203, the photoresist is spin-coated to cover the hard mask sacrificial layer 204. After exposure and development, as Figure 14 As shown, a structure with photoresist 205, 206 is formed on the hard mask sacrificial layer 204; continue to use the photoresist 205, 206 as a mask to etch the hard mask sacrificial layer 204 to the interlayer insulating dielectric layer 203, as Figure 15 As shown, the photoresist 205, 206 is removed to form a structure with hard ...

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Abstract

The invention relates to the field of semiconductor manufacture, in particular to a method for simplifying a double pattern exposure process of side wall definition. The invention discloses the method for simplifying the double pattern exposure process of the side wall definition, which has the advantages that through reducing the exposure process in the double pattern exposure of the traditional side wall definition, the process flow is simplified, the process cost is correspondingly reduced, and the device qualification rate is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for simplifying the double-pattern exposure process for side wall definition. Background technique [0002] In the manufacturing process of semiconductor devices, with the rapid development of ultra-large-scale integrated circuits, while the integration of chips is getting higher and higher, the chip size is getting smaller and smaller. In the process of chip manufacturing process, the critical dimension (Critical Dimension, referred to as CD) is also shrinking step by step with the development of the process generation, so the requirements for the lithography process are getting higher and higher; due to the wavelength of the light source of the lithography machine The existing 193nm immersion lithography machine can no longer meet the needs of 32nm and below processes. Nowadays, double patterning (Double Patterning) technology or extreme ultraviolet lithograp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311G03F7/00
Inventor 俞柳江
Owner SHANGHAI HUALI MICROELECTRONICS CORP