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Photomask and exposure method thereof

An exposure method and photolithography technology, applied in the field of semiconductor technology, can solve problems such as increasing production costs

Inactive Publication Date: 2012-05-09
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0026] In order to solve the problem of additional production of special photoresist plates in traditional technology, which increases production costs, it is necessary to provide a photoresist plate that can reduce costs

Method used

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  • Photomask and exposure method thereof
  • Photomask and exposure method thereof
  • Photomask and exposure method thereof

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Embodiment Construction

[0046] image 3 It is a top view diagram of the lens on the photolithography plate when the stepper is used to cooperate with the photolithography plate. The circular area 310 represents the maximum exposure area of ​​the lens (similar to the outline of the lens itself), and the square area filled with oblique lines is the chip area 320, which is also the largest area of ​​a commonly used chip area, and its four vertices are all in the circular area 310 on the circumference. Since the number of shots on the wafer is smaller, the exposure time of each wafer is shorter, and the utilization rate and production efficiency of the equipment are higher. Therefore, the traditional photolithography plate should make full use of the maximum size allowed by the lens of the photolithography machine, and make the shot size the largest, that is, the largest area of ​​the aforementioned commonly used chip area, that is, image 3 A square chip area 320 is shown.

[0047] Figure 4 It is a...

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Abstract

The invention relates to a photomask comprising a chip region and a marked image region which is arranged outside the chip region and allowed by a lens of a photoetching machine. The invention also relates to an exposure method of the photomask, comprising the following steps: installing the photomask and carrying out para-position, wherein the photomask comprises the chip region and the marked image region which is arranged outside the chip region and allowed by the lens of the photoetching machine; selecting a special exposure program; and exposing wafers by using the special exposure program, respectively arranging an exposure region at the chip region and the marked image region, and sequentially exposing each wafer. By using the photomask and the exposure method thereof, the equipment capacity can be sufficiently utilized, and the production efficiency can be increased.

Description

【Technical field】 [0001] The invention relates to a semiconductor process, in particular to a photolithography plate and an exposure method of the photolithography plate. 【Background technique】 [0002] The single imaging area on the wafer after the photolithographic pattern is exposed through the lens of the lithography machine is called a shot, and its size is called the shot size. Some incomplete graphics will be formed on the edge of the wafer, called partial shot. Due to the particularity of the production process or temporary special needs, sometimes it is necessary to etch some special marking patterns at the partial shot, such as photolithographic alignment test marks. The modern integrated circuit production process has a great influence on the alignment test mark of lithography, especially in the back end (BEOL) process, the lithography mark is often damaged, so it is necessary to make a new alignment test mark on the wafer, Or patch the original markup. [0003...

Claims

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Application Information

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IPC IPC(8): G03F1/42G03F1/44G03F7/20
Inventor 黄玮
Owner CSMC TECH FAB2 CO LTD
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