Electromigration reliability test structure and making method for multilayer of metal interconnected metal wires

A test structure, multi-layer metal technology, applied in circuits, electrical components, measurement devices, etc., can solve the problems of long life test time and a large number of sample packaging, so as to reduce test costs, test samples, and test time. Effect

Active Publication Date: 2012-05-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

As the number of metal interconnection layers increases, the structure of the electromigration test becomes more and more. It is estimated that the life test of each

Method used

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  • Electromigration reliability test structure and making method for multilayer of metal interconnected metal wires
  • Electromigration reliability test structure and making method for multilayer of metal interconnected metal wires
  • Electromigration reliability test structure and making method for multilayer of metal interconnected metal wires

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Embodiment Construction

[0015] The electromigration reliability test structure of the multilayer metal interconnection metal wire of the present invention comprises a multilayer metal wire, the length of the metal wire is greater than or equal to 200 microns, and other parameters of the metal wire are the same as the chip design to be tested, and every two layers The metal wires are connected by through holes to form a "bow"-like structure; the end of the first layer of metal wires far away from the through holes and the end of the top layer of metal wires far away from the through holes are respectively provided with current input ends; each metal wire The two ends are respectively provided with voltage measuring terminals. The metal wires in each layer are the same length.

[0016] figure 2 Be a specific embodiment of the present invention, wherein metal wire is 5 layers, the length d of metal wire is chosen 400 microns, width b, the size a of through hole all is the design requirement setting of...

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Abstract

The invention discloses an electromigration reliability test structure of multilayer of metal interconnected metal wires, comprising the multilayer of metal wires, the lengths of the metal wires are no less than 200 microns, other parameters of the metal wires meet the design requirements of a chip to be tested, and every two layers of metal wires are connected by a through hole so as to form a structure in shape of Chinese character GONG (arch), wherein one end of a first layer of metal wire far away from the through hole and one end of a top layer of metal wire far away from the through hole are respectively provided with a current input end; and both ends of each metal wire are respectively provided with a voltage measuring end. With the adoption of the electromigration reliability test structure disclosed by the invention, electromigration service life data of each layer of metal wire are obtained with the testing of a structure, thereby the test time can be greatly shortened, a process development period is shortened, test samples are reduced, and the test cost is reduced.

Description

technical field [0001] The invention relates to an electromigration reliability test structure of multilayer metal interconnected metal lines. The invention also relates to a method for preparing the test structure. Background technique [0002] Electromigration is the phenomenon of mass migration of metals under the action of high current density, which causes holes in the cathode end of the metal wire (resulting in increased resistance or even open circuit); the anode end forms hillocks or whiskers (short circuit due to contact with adjacent metal wires) ). Therefore, electromigration is an important factor affecting device reliability, and electromigration testing has also become one of the important items in process reliability evaluation. The traditional electromigration test method is to apply a DC current to the test structure at high temperature, and observe the resistance change at the same time, until the resistance changes to a certain extent and record the fail...

Claims

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Application Information

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IPC IPC(8): H01L23/544G01R27/02H01L21/02
Inventor 王笃林陈琦范曾轶廖炳隆
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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