Semiconductor device structure and method for manufacturing same
A device structure, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as not too many changes, different metal alloys, etc.
Inactive Publication Date: 2012-05-16
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0010] However, there are some drawbacks in the above-mentioned method of fabricating semiconductor device structures: on the one hand, for NMOS and PMOS, since the requirements for metal gate performance are different, the metal alloys used for these two transistor types are different; on the other hand, , most of the requirements for the input and output devices generated by each device are the same, for example, there are not many changes in the 2.5v input and output of 90nm, 65nm, 45nm, and 32nm
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[0051] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0052] It should be noted that the terminology used here is only for describing specific embodiments, and is not intended to limit the exemplary embodiments according to the present invention. As used herein, singular forms are intended to include plural forms unless the context clearly dictates otherwise. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates the presence of the features, integers, steps, operations, means and / or components, but does not exclude the presence o...
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The invention provides a semiconductor device structure and a method for manufacturing the same, wherein the method is characterized in merging a high dielectric constant / metal gate core device and a SiON / polysilicon gate input-output device. In the sub 45 nanometers CMOS (complementary metal oxide semiconductor) technology, when the SiON / polysilicon gate technology is used for the input-output device, the high dielectric constant / metal gate is adopted for the core device. According to the method provided by the invention, the traditional SiON / polysilicon gate input-output device and the high dielectric constant / metal gate core device can be merged effectively, thus the integral performances of the semiconductor device can be improved, and the technology process can be simplified.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor device structure and a method for manufacturing the semiconductor device structure. Background technique [0002] The fabrication of integrated circuits requires the formation of a large number of circuit elements on a given chip area according to a specified circuit layout. Considering the excellent characteristics of operation speed, power consumption, and cost efficiency, CMOS technology is currently one of the most promising methods for manufacturing complex circuits. In the manufacture of complex integrated circuits using CMOS technology, millions of transistors (eg, N-channel transistors and P-channel transistors) are formed on a substrate comprising crystalline semiconductor layers. Whether it is an N-channel transistor or a P-channel transistor, a MOS transistor contains a so-called PN junction, which is formed by the interface of the following two...
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Login to View More IPC IPC(8): H01L21/77H01L21/28H01L29/43
Inventor 宁先捷
Owner SEMICON MFG INT (SHANGHAI) CORP