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Memory device and method of fabricating the same

A technology of storage device and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as voltage drop, operation problems of access transistors, etc., to reduce resistance and avoid mutual interference Effect

Active Publication Date: 2013-11-06
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Consequently, two opposing locations on opposite sides of the array have significant voltage drops, causing operational problems for the opposing access transistors.

Method used

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  • Memory device and method of fabricating the same
  • Memory device and method of fabricating the same
  • Memory device and method of fabricating the same

Examples

Experimental program
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Embodiment Construction

[0057] figure 1 It is a three-dimensional schematic diagram illustrating a storage device 1 according to an embodiment of the present invention. refer to figure 1 , the storage device 1 includes: a ground structure 11 . The mesa structure 11 includes at least one pair of source / drain regions 101, at least one isolation column 102 relative to the at least one pair of source / drain regions 101, and at least one channel base region 103 relative to the at least one pair of source / drain region 101 . Each pair of source / drain regions 101 partially defines a top portion of the mesa-like structure 11 and is isolated by the at least one isolation pillar 102, and at least one channel base region 103 connects the pair of source / drain regions 101 bottom to allow channel current to flow. In addition, the isolation column 102 can be any suitable insulating material, such as silicon oxide.

[0058] A word line 12 extends from one side of the terrace-shaped structure 11 to an opposite sid...

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PUM

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Abstract

A memory device includes a mesa structure and a word line. The mesa structure, having two opposite side surfaces, includes at least one pair of source / drain regions and at least one channel base region corresponding to the pair of source / drain regions formed therein. The word line includes two linear sections and at least one interconnecting portion. Each linear section extends on the respective side surface of the mesa structure, adjacent to the channel base region. The at least one interconnecting portion penetrates through the mesa structure, connecting the two linear sections.

Description

technical field [0001] The invention relates to a storage device, in particular to a storage device with a trench unit structure and a manufacturing method thereof. Background technique [0002] Due to its simple structure, dynamic random access memory (DRAM) can provide more storage capacity per unit chip area than other types of memory, such as static random access memory. A dynamic random access memory includes a plurality of dynamic random access memory units, and each dynamic random access memory unit includes a capacitor and a transistor for storing data, wherein the transistor is coupled to the capacitor to control its charging and discharging. During a read operation, a wordline is activated to turn on the transistor. The turned-on transistor allows the voltage across the capacitor to be read by a sense amplifier over the bit line. During a write operation, when a word line is activated, the data to be written is provided on the bit line. [0003] In order to meet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/528H01L27/108H01L21/768H01L21/8242H10B12/00
CPCH01L27/10876H01L27/10891H01L21/76229H10B12/053H10B12/488
Inventor 庄英政徐秉诚杨胜威张明成蔡鸿明
Owner NAN YA TECH