High speed thyristor with novel layout of short circuit points

Abstract

The invention discloses a high speed thyristor. The high speed thyristor comprises a silicon wafer which is provided with a gate pole G, an anode A and a cathode K; the cathode K is provided with short circuit points which are used for improving electric properties of the high speed thyristor; the short circuit points have a shape of a regular hexagon, and are distributed in the shape of a regular hexagon; and the short circuit points which are distributed on the regular hexagon have complementary position relationship in the orientation. When the high speed thyristor is in a started state, a transverse electric field which is established below the surface of the cathode is distributed in a more balanced way to ensure that cathode electrons can be injected in a more balanced way and the high speed thyristor can be started in a more balanced way, the starting expansion process is more balanced and quick, and the overall injection intensity of cathode electrons is higher, so that di / dt tolerance of devices can be improved, and starting consumption is reduced, and starting time can be shortened.

Description

technical field [0001] The invention relates to a fast thyristor, in particular to a short-circuit point on the cathode of the fast thyristor for improving the electrical performance of the fast thyristor. Background technique [0002] In the prior art, the cathode of the thyristor adopts circular short-circuit points distributed in a triangle or a square. When the fast thyristor is in the open state, the distribution of the lateral electric field established by these two distribution forms of short-circuit points under the cathode surface is not balanced enough, which leads to the unbalanced opening of the cathode electron injection, and finally leads to the unbalanced and rapid opening expansion process. The fast thyristor The di / dt tolerance decreases, the turn-on power consumption becomes larger and the turn-on time is prolonged. In the on-state, the distribution of electron intensity injected into the cathode is unbalanced, which makes the on-state resistance of the fa...

AI Technical Summary

Problems solved by technology

When the fast thyristor is in the open state, the distribution of the lateral electric field established by these two distribution forms of short-circuit points under the cathode surface is not balanced enough, which leads to the unbalanced opening of the cathode electron injection, and finally leads to the unbalanced and rapid opening expansion process. The fast thyristor Reduced di / dt tolerance, larger turn-on power consumption and longer turn-on time

In the on-state, the distribution of electron intensity injected into the cathode is unbalanced, which makes the on-state resistance of the fast thyristor increase, the on-state current density is low and the distribution is uneven, and the on-state power consumption increases; The hole extraction is not balanced and fast enough, which increases the tail current of the fast thyristor turn-off, prolongs the turn-off time, reduces the dv / dt tolerance and increases the turn-off power consumption

Images