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Composition for removing resists used with copper or copper alloy

A composition, copper alloy technology, applied in optics, photomechanical equipment, photosensitive material processing, etc., can solve problems such as increased defect rate, low corrosion resistance, corrosion, etc.

Active Publication Date: 2013-10-30
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, these stripping compositions also suffer from severe corrosion during the stripping process due to their low corrosion resistance to films containing copper or copper alloys, and their use in processes for depositing gate insulating films (post-processes) caused problems by increasing the defect rate

Method used

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  • Composition for removing resists used with copper or copper alloy
  • Composition for removing resists used with copper or copper alloy
  • Composition for removing resists used with copper or copper alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 5 and comparative example 1 to 6

[0078] Examples 1 to 5 and Comparative Examples 1 to 6: Preparation of Photoresist Stripping Composition

[0079] A composition for removing copper or copper alloy photoresist was prepared using the ingredients and composition ratios shown in Table 1 below.

[0080] 【Table 1】

[0081]

[0082] NPE: 1-(N-methylpiperazine)ethanol

[0083] HEM: N-(2-hydroxyethyl)morpholine

[0084] TEA: Triethanolamine

[0085] DMEA: Diethylethanolamine

[0086] APM: N-Aminopropylmorpholine

[0087] MEA: Monoethanolamine

[0088] NMEA: N-Methylethanolamine

[0089]DGA: diglycolamine

[0090] NMP: N-methyl-2-pyrrolidone

[0091] DMF: N,N-Dimethylformamide

[0092] BDG: Butyldiethanol

[0093] TEG: Triethylene glycol

[0094] NMF: N-Methylformamide

[0095] DMAc: N,N-Dimethylacetamide

[0096] CAT: Catechol

[0097] GA: gallic acid

[0098] TTA: Tolyltriazole

[0099] BTA: 1,2,3-Benzotriazole

Embodiment 6 to 12 and comparative example 7 to 12

[0123] Examples 6 to 12 and Comparative Examples 7 to 12: Preparation of Photoresist Stripping Composition

[0124] A composition for stripping copper or copper alloy photoresist was prepared using the ingredients and composition ratios shown in Table 3 below.

[0125] 【table 3】

[0126]

[0127] HEP: Hydroxyethylpyrrolidone

[0128] NPE: N-Piperidine Ethanol

[0129] HPP: N-(3-hydroxypropyl)-2-pyrrolidone

[0130] HMP: Hydroxymethylpyrrolidone

[0131] TEA: Triethanolamine

[0132] DMEA: Diethylethanolamine

[0133] MEA: Monoethanolamine

[0134] NMEA: N-Methylethanolamine

[0135] DGA: diglycolamine

[0136] NMP: N-Methylpyrrolidone

[0137] DMF: Dimethylformamide

[0138] BDG: Butyldiethanol

[0139] TEG: Triethylene glycol

[0140] DMAc: Dimethylacetamide

[0141] NMF: N-Methylformamide

[0142] CAT: Catechol

[0143] GA: gallic acid

[0144] TTA: Tolyltriazole

[0145] BTA: 1,2,3-Benzotriazole

[0146] BDG: Butyldiethanol

Embodiment 13 to 18 and comparative example 13 to 18

[0170] Examples 13 to 18 and Comparative Examples 13 to 18: Preparation of Photoresist Stripping Composition

[0171]A composition for stripping copper or copper alloy photoresist was prepared using the ingredients and composition ratios shown in Table 5 below.

[0172] 【table 5】

[0173] category

type

quantity

type

quantity

type

quantity

type

quantity

type

quantity

type

quantity

Example 13

DMAET

8

NMP

11

DMAc

50

DMF

30.8

TTA

0.2

-

-

Example 14

DBAET

10

NMP

11

DMAc

48

DMF

30.8

TTA

0.2

-

-

Example 15

DMAEE

5

NMP

5

-

-

NMF

89.9

TTA

0.1

Example 16

DBAEE

5

NMP

16

DMAc

48

NMF

30.8

TTA

0.2

-

-

Example 17

DMAEE

3

BDG

20...

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Abstract

The present invention relates to a composition for removing resists used with copper or copper alloy, comprising: (a) from 0.1 to 30 wt.% of an amine compound; and a (b) balance of an organic solvent.

Description

technical field [0001] The invention relates to a composition for removing copper or copper alloy photoresist. [0002] This application claims the benefit of Korean Patent Application No. 10-2009-0065464 filed on Jul. 17, 2009 (which is hereby incorporated by reference in its entirety into this application). Background technique [0003] In the process of manufacturing integrated circuits for semiconductor devices or microcircuits for flat panel displays, a conductive metal film or insulating film formed on a substrate is uniformly coated with photoresist, selectively exposed, and then developed to form a photoresist pattern. Here, an aluminum or aluminum alloy film, a copper or copper alloy film, or the like is used as the conductive metal film, and a silicon oxide film, a silicon nitride film, or the like is used as the insulating film. Then use the patterned photoresist film as a photomask to wet-etch or dry-etch the conductive metal film or insulating film, transfer th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
CPCG03F7/425
Inventor 洪亨杓洪宪杓金炳默金泰熙李承佣
Owner DONGWOO FINE CHEM CO LTD