Selective arrangement method of discrete nano-material

Abstract

A selective arrangement method of a discrete nano-material comprises steps of: 1) oxidizing a clean substrate, typically a silicon substrate, to obtain a layer of oxide of silicon on a surface of the substrate; 2) placing the oxidized silicon chip into a C6-C8 hydrocarbon solution of octadecyl trichlorosilane and growing a layer of nonpolar OTS self-assembly monomolecular film; 3) etching the nonpolar OTS self-assembly monomolecular film selectively on an objective zone of the substrate by utilizing laser through phase raster; 4) placing the etched silicon substrate in a methanol solution of 3-triethoxy silicyl-1-propylanmine to grow a polar APS self-assembly monomolecular film on the zone etched by the laser and form a polar and nonpolar interval area; and 5) immersing the modified substrate into a nano wire or nano-material fluid suspension and lifting, so as to arrange the nano wire or nano-material according to a rule in the objective polar zone and realize selective arrangement of a discrete semiconductor nano wire. The method has application value.

Description

technical field [0001] The invention relates to a new method for selectively arranging nano materials to form ordered and patterned arrays, which can be used to further prepare various nano material devices to obtain stable and excellent performance. Background technique [0002] In the past ten years, scientists have achieved great success in the preparation of nanomaterials, and have successively obtained various nanomaterials with different shapes, structures, and properties. Most of these nanomaterials have excellent and unique properties and have good applications. prospect. Due to the constraints of growth conditions and various factors, most of the nanomaterials prepared at present are discrete nanomaterials, and there are still many problems in applying them to practical devices. How to arrange and integrate discrete nanomaterials is an extremely important research topic for applying nanomaterials to device fabrication. [0003] Previously, scientists have explored...

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Problems solved by technology

[0003] Previously, scientists have explored many methods of aligning and integrating nanomaterials, such as electric field induction, fluid flow guidance, LB film method, gas-assisted method, imprint transfer method, etc. Materials or substrates have certain limitations, and there is still a lack of a low-cost, large-scale universal alignment method

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