Preparation method of self-assembly vanadium oxide film

Abstract

The invention relates to a preparation method of a self-assembly vanadium oxide film, and belongs to the field of inorganic semi-conductor functional materials. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a substrate by utilizing an acetone solution, then carrying out ultrasonic cleaning by utilizing deionized water, carrying out the ultrasonic cleaning by utilizing absolute ethyl alcohol, and finally drying; putting the dried substrate in an octadecyltrichlorosilane-toluene solution, then standing, and then irradiating the obtained substrate by ultraviolet light; dissolving V2O5 and ascorbic acid in water, and adding diluted HCl to regulate the pH value until a transparent clear blue solution A is formed; dissolving cerium acetate and ammonium paratungstate in the water, and adding the diluted HCl to regulate the pH value so as to form a solution B; mixing the solution A with the solution B, stirring while mixing, adding polyethylene glycol, and then carrying out seal ageing; putting the substrate irradiated by the ultraviolet light into the solution subjected to seal ageing, then taking out the processed substrate and drying the processed substrate; and finally carrying out thermal treatment in the presence of Ar gas. In the preparation method, the synthesis is carried out at a lower temperature, thereby avoiding the toxicity of vanadium oxide at a high temperature, simplifying the process flow of precursor preparation and being beneficial to environment conservation and health of operators.

Description

technical field [0001] The invention belongs to the field of inorganic semiconductor functional materials, and in particular relates to a self-assembly preparation method of a vanadium dioxide thin film with phase transition properties. Background technique [0002] Since Morin first observed the thermally induced phase transition properties of vanadium oxides in 1959, VO 2 As a thermally induced phase change oxide, it has high activation energy and high temperature coefficient of thermal resistance. Vanadium oxide transforms from a low-temperature semiconductor monoclinic phase to a high-temperature rutile tetragonal metal phase at around 68 °C, and its resistivity, magnetic susceptibility, light transmittance, and reflectance change abruptly. VO in film form 2 The magnitude of change in resistivity can be as high as 4 to 5 orders of magnitude. Based on VO 2 The thin film exhibits excellent electro-optic properties during the phase transition process, which makes it hav...

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Problems solved by technology

Usually vanadium oxide films are prepared with V 2 o 5 Heating to a high temperature of 700-900°C and then pouring it into water directly to make a sol and then coating it with glue, drying and annealing. This process needs to be operated under high temperature conditions, and the environment is relatively difficult. At the same time, the volatilization of vanadium powder has certain toxicity.

The sputtering method is another conventional method for preparing vanadium oxide thin films, which requires a relatively complicated process, especially high precursor requirements, is not easy to buy and is expensive, and requires specific vacuum conditions during preparation, etc.

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