Welding method of target and back plate

Abstract

The invention discloses a welding method of a target and a back plate. The welding method comprises the following steps of: providing a titanium target and an aluminium back plate; processing a welding surface of the titanium target into a thread shape, and carrying out roughness processing on the welding surface of the aluminium back plate; sheathing a first mold on the aluminium back plate and covering a second mold on the opposite surface of the welding surface of the titanium target; adopting a hot-pressing method to weld the titanium target and the aluminium back plate to form a target component; and carrying out heat treatment on the target component. According to the technical scheme of the welding method, the bonding strength between the titanium target and the aluminium back plate after welding is higher, the large-area welding of the titanium target and the aluminium back plate is realized, and the cost for producing the target component formed by the titanium target and the aluminium back plate is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method of a target material and a back plate. Background technique [0002] In the semiconductor industry, a target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. [0003] In the existing process, the working environment of the target assembly is relatively harsh. For example, in the sputtering process, the working temperature of the target assembly is relatively high, such as 300°C to 500°C; in addition, one side of the target assembly is filled with cooling The water is strongly cold while the other side is at 10 -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the upper and lower sid...

AI Technical Summary

Problems solved by technology

For the HP method, its advantage is that the cost of manufacturing target components using the HP method is lower than that of the HIP method, but when the HP method is used for welding the target and the back plate, the waste of the back plate material will increase. Therefore, generally speaking, the cost of manufacturing the target is relatively high, and the performance of the target component processed by the HP method is not very good, which affects the subsequent use of the target component for PVD coating. film quality

[0008] In addition, in the process of forming the target assembly by diffusion welding, for the target assembly with titanium as the target and aluminum as the back plate material, titanium and aluminum are highly active metal elements. , the surface of the two will quickly form an oxide layer in the air, which hinders the diffusion welding between the two, so that the titanium target and the aluminum back plate cannot be welded in a large area; therefore, the titanium target, the aluminum back plate Diffusion welding of plates usually needs to be carried out under conditions of high vacuum, high temperature, high pressure, etc.

However, even so, the welding strength of the final titanium target assembly still cannot meet the requirements for use

Images