Distributed image high power tube core

Abstract

The invention relates to a distributed image high power tube core, which comprises a substrate, high electron mobility transistor (HEMT) unit cells 1a, 1b, 1c and 1d, a power distribution network, a power synthesis network and a source strip grounding radiating through hole, wherein the HEMT unit cells 1a, 1b, 1c and 1d, the power distribution network, the power synthesis network and the source strip grounding radiating through hole are all arranged on the substrate, and source electrodes of the HEMT unit cells 1a, 1b, 1c and 1d are connected with the ground through the source strip grounding radiating through hole. The HEMT unit cells 1a, 1b, 1c and 1d are distributed on the substrate evenly and are further distributed and separated by adopting the source strip grounding through hole. The HEMT unit cell source electrodes are grounded well through the source strip grounding radiating through hole, good electric performance is achieved, and the tube core is separated evenly in the longitudinal direction by using the size of a power distribution / synthesis network simultaneously, therefore even distribution of heating sources is achieved, local hot spots are avoided, radiating uniformity of the tube core is greatly improved, and stability of devices under high power is guaranteed.

Description

technical field [0001] The invention relates to a high-power tube core, specifically, a high-power tube core with a distributed mirror image. Background technique [0002] Solid-state microwave power devices and monolithic circuits are core components in systems such as electronic countermeasures, phased array radar, precision strikes, microwave communications, and satellite aerospace. Due to the particularity of their application background, solid-state microwave power devices and monolithic circuits have always been It is a key field for foreign countries to impose technology blockade and product embargo on my country; and solid-state power amplifier chips, as the core components, are subject to stricter control. At present, the high-performance solid-state microwave power monolithic chips working in the C-band and above frequency bands are mainly GaAs-based second-generation semiconductor devices. As the main representative of the third-generation semiconductors, GaN mate...

AI Technical Summary

Problems solved by technology

For practical application, the longitudinal size of the chip cannot be larger than half the wavelength, so the output power of a single chip is limited

In order to meet the output power requirements, it is often necessary to synthesize multiple chips, which increases the overall size, reduces efficiency, and increases circuit complexity. At the same time, after the single-column gate width is increased, the heat source in the middle of the device is relatively concentrated, which affects the reliability of the chip.

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