Silicon nanometer wire detecting unit
A silicon nanowire and detection unit technology, applied in nanotechnology, nanotechnology, nanotechnology for sensing, etc., can solve problems such as etching process problems, photoresist pouring, affecting the yield of SiNW detection units, etc. , to avoid the problem of glue pouring and improve the yield
Active Publication Date: 2012-06-27
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
In the manufacturing process of the SiNW detection unit, the very large aspect ratio of silicon nanowires will cause problems such as reverse glue during lithography, such as figure 1 The middle right picture shows a normal silicon nanowire, figure 1 The left picture in the figure shows the silicon nanowire with the phenomenon of glue inversion, which will cause problems in the etching process in the future, thus affecting the yield rate of the SiNW detection unit
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[0012] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the embodiments described here are for illustration only, and are not intended to limit the present invention.
[0013] Such as figure 2 Shown is a schematic diagram of the layout of source, drain and silicon nanowires before improvement. figure 2 , the silicon nanowire 103 is coupled between the source 101 and the drain 102 . It should be noted, figure 2 The planar shape of the silicon nanowire 103 is a rectangle, but those skilled in the art can understand that the planar shape of the silicon nanowire 103 itself can also be other shapes, for example, it can be a curved pipe shape, and the present invention is not limited to the above shape.
[0014] image 3 is a schematic diagram of the improved layout of source, drain and silicon nanowires. exist image 3 , the silicon nanowire 103' is still coupled between ...
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The invention provides a silicon nanometer wire detecting unit, which comprises a source electrode, a drain electrode and a silicon nanometer wire coupled between the source electrode and the drain electrode. A photoresist reinforced structure is arranged on the silicon nanometer wire, and / or a first stress releasing area and a second stress releasing area are arranged at a connecting position between the drain electrode and the silicon nanometer wire and a connecting position between the source electrode and the silicon nanometer wire respectively. The technical scheme can reduce requirements of a silicon nanometer wire (SiNW) detecting unit for photoetching and etching processes and improve yield of the SiNW detecting unit.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a silicon nanowire detection unit. Background technique [0002] Silicon Nano-wire (SiNW) detection unit is currently the most commonly used basic unit of biological chips and is widely used in the field of biological detection. Its main working principle is similar to that of metal oxide semiconductor field effect transistors (MOSFETs). The oxide layer (oxide) on polysilicon (polysilicon) or silicon (Silicon) is used as the gate oxide, because the biomolecules adsorbed on the silicon nanowires in the silicon nanowire detection unit usually have charges, and the charges will have a negative impact on the silicon nanowires. Conduct potential adjustment similar to MOSFETs, which in turn affects the conductive properties of silicon nanowires. Therefore, specific biomolecules can be identified through the monitoring of this conductive property. [0003] In the silicon nan...
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IPC IPC(8): H01L29/78H01L29/08B82Y15/00G01N27/26
Inventor 曹永峰
Owner SHANGHAI HUALI MICROELECTRONICS CORP