Process for manufacturing Zener diode at low temperature
A technology of zener diode and process, applied in the field of low temperature manufacturing zener diode process
Active Publication Date: 2012-07-04
德兴市意发功率半导体有限公司
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[0002] At present, Zener diodes are widely used in electronic components as clamping voltage devices. Its basic structure is formed by a pair of P-type heavily doped regions and N-type heavily doped regions. When the transient voltage is too high to reach the Zener diode in When the breakdown voltage is reached, the voltage loaded on the Zener diode remains unchanged, and the energy is released through the Zener diode to protect the gate voltage stability. The existing process is achieved by ion implantation and high temperature annealing (>850C). This will limit the Zener diode process to be completed before the metal layer is formed during integration.
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[0024] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0025] Such as figure 1 As shown, a low-temperature manufacturing Zener diode process includes the following steps:
[0026] Such as figure 2 Growing or depositing a layer of silicon oxide on the N-type heavily doped N+ silicon wafer; such as image 3 Open a gap on the above-mentioned silicon oxide through semiconductor photolithography and etching process, and etch out a silicon groove with the same thickness as the N+ region, and clean the photoresist on the silicon groove; Figure 4 Coating a layer of aluminum film on the silicon oxide layer, and growing a layer of amorphous silicon film on the aluminum film, wherein a composite layer of aluminum film and amor...
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Abstract
The invention discloses a process for manufacturing a Zener diode at low temperature. The process comprises the following steps of: growing or depositing a silicon oxide layer on an N type heavily-doped N+ silicon chip; forming a notch on the silicon oxide layer by using a semiconductor photoetching and etching process, etching a silicon groove with the same thickness as an N+ area, and washing a photoresist on the silicon groove; coating an aluminum film on the silicon oxide layer, and growing a non-crystalline silicon film on the aluminum film, wherein a composite layer of the aluminum film and the non-crystalline silicon film is formed in the silicon groove; annealing at the low temperature, diffusing silicon (Si) atoms of the non-crystalline silicon film in the silicon groove to the aluminum film, and forming an aluminum-doped P+ single crystal on the surface of the silicon chip in the silicon groove; and washing and removing the residual aluminum film and the residual non-crystalline silicon film on the silicon oxide layer. By integration at the low temperature of below 400 DEG C, the manufacturing process of the Zener diode is more flexible.
Description
technical field [0001] The invention relates to the field of diode manufacturing, in particular to a process for manufacturing Zener diodes at low temperature. Background technique [0002] At present, Zener diodes are widely used in electronic components as clamping voltage devices. Its basic structure is formed by a pair of P-type heavily doped regions and N-type heavily doped regions. When the transient voltage is too high to reach the Zener diode in When the breakdown voltage is reached, the voltage loaded on the Zener diode remains unchanged, and the energy is released through the Zener diode to protect the gate voltage stability. The existing process is achieved by ion implantation and high temperature annealing (>850C). This will limit the Zener diode process to be completed before the metal layer is formed during integration. Contents of the invention [0003] The object of the present invention is to propose a low-temperature process for manufacturing Zener di...
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IPC IPC(8): H01L21/329
Inventor 何志周炳季安刘晓萌
Owner 德兴市意发功率半导体有限公司