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Metal supporting vertical structure fluorescent powderless white light LED

A metal-supported, phosphor-free technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of large light decay, poor luminous stability of phosphors, and low effective light conversion efficiency, and achieve improved heat dissipation performance and external appearance. The effect of quantum effect enhancement

Active Publication Date: 2014-06-25
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the use of phosphors, there is also the low effective conversion efficiency of light, especially the efficiency of red phosphors needs to be greatly improved
The fluorescent powder used in this LED structure has poor luminous stability and large light attenuation. The selection of the ultraviolet wavelength of the fluorescent powder, the difficulty of making UV-LEDs, and the development of anti-UV packaging materials are also difficulties that need to be overcome at present.

Method used

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  • Metal supporting vertical structure fluorescent powderless white light LED

Examples

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Effect test

Embodiment 1

[0017] Through epitaxial technology, P-type heavily doped yellow AlGaInP LEDs and N-type heavily doped blue silicon carbide (SiC) substrate GaN-based LEDs were obtained respectively. A Ni / Ag / Au alloy layer is deposited on the P-type GaN layer as an ohmic contact alloy reflective layer by using electron beam evaporation equipment. Then, the GaN-based LED device is bonded to the Cu / Al alloy support substrate with the coating layer as the contact surface through a bonding machine. Then, use dry etching (such as ICP) to completely peel off the SiC substrate to expose the heavily doped N-type GaN surface, and obtain a blue-emitting GaN-based LED with metal support. The P-type heavily doped GaAs surface of the yellow AlGaInP LED is in contact with the N-type heavily doped surface of the blue-emitting GaN-based LED with a metal support, and the double LED chips are bonded. Then, the GaAs substrate is etched away by chemical methods, and part of the AlGaInP LED is removed by etching ...

Embodiment 2

[0019] Through epitaxial technology, P-type heavily doped red-yellow AlGaInP LEDs and N-type heavily doped blue sapphire (Al 2 o 3 ) Substrate GaN-based LED. A Ni / Ag / Au alloy layer is deposited on the P-type GaN layer as an ohmic contact alloy reflective layer by using electron beam evaporation equipment. Then, the GaN-based LED device is bonded to the Ni / Cu alloy support substrate with the coating layer as the contact surface through a bonding machine. Al by laser lift-off 2 o 3 The substrate is removed, and the heavily doped N-type GaN surface is completely peeled off to obtain a blue-emitting GaN-based LED with a metal support. The P-type heavily doped GaAs surface of the red-yellow AlGaInP LED is in contact with the N-type heavily doped surface of the blue-emitting GaN-based LED with a metal support, and the double LED chips are bonded. Then, the GaAs substrate is etched away by chemical methods, and part of the AlGaInP LED is removed by etching technology to reach th...

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Abstract

The invention discloses a metal supporting vertical structure fluorescent powderless white light LED and a preparation method thereof. The LED connects an LED emitting blue light and an LED emitting red light, yellow light or red-yellow mixed light which are driven by current to emit a white light. The LED is characterized in that the two LEDs emitting different colors (i.e. the LED emitting the blue light and the LED emitting the red light, the yellow light or the red-yellow mixed light) are integrated together by adopting a direct linkage technique; a metal supporting substrate taken as a new support of a whole device and an underlay stripping technique enable the heat radiating performance of the device is greatly improved, and the defect that LED junction temperature affects the lighting performance is overcome; introduced multiple electrodes can respectively control the proportion of the red light and the yellow light or the red-yellow mixed light and the blue light to further regulate the color temperature of the white light LED; and ohm contact alloy emitting layer and the stripping of a GaAs underlay enable the light extraction efficiency of the device to be improved to a great extent.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices and their preparation, and in particular relates to a preparation method of a metal-supported vertical structure non-phosphor powder white light LED. Background technique [0002] At present, most white LEDs on the market use monochromatic light to excite phosphors, and use the principle of light color to generate white light. Among them, it is most common to use mature and commercialized blue light chips to excite yellow phosphors to obtain white light. However, the shift of the emission wavelength of the blue light chip, the change of the intensity, and the change of the coating thickness of the phosphor powder will all affect the uniformity of the white light emitted by the device. In addition, the luminous efficiency of phosphor is low, and the spectrum is narrow, the color is incomplete, the color temperature is high, and the color rendering is low. The light bas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/075H01L33/64
Inventor 申人升梁红伟柳阳杜国同
Owner DALIAN UNIV OF TECH