1,053 nanometer femtosecond pulse generation device with stable carrier envelope phase

A technology of carrier envelope phase and femtosecond pulse, which is applied to laser components, electrical components, phonon exciters, etc., can solve the problems of spectral center wavelength cannot be tuned, affect sensitivity, affect pulse stability, etc., and achieve carrier envelope network phase stabilization, increased stability, ultra-high contrast effect

Inactive Publication Date: 2012-07-04
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

However, the pulse purification capability of this device is limited by the extinction ratio of the polarizer and analyzer, and the contrast can only be increased by 2 to 4 orders of magnitude on the original basis.
On the other hand, the XPW technique is limited by the incident light source
If there is only an 800nm ​​femtosecond light source, femtosecond pulses in the 1053nm or 1064nm band cannot be generated to meet the needs of neodymium glass applications; if the CEP of the incident light is unstable, it is impossible to obtain femtosecond pulses with stable CEP
Finally, due to the use of third-order nonlinear effects in prior art devices, they are very sensitive to external influences
The instability of the input energy and the change of the airflow in the device will cause the output beam to shake and the energy to change drastically, thus affecting the stability of t

Method used

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  • 1,053 nanometer femtosecond pulse generation device with stable carrier envelope phase
  • 1,053 nanometer femtosecond pulse generation device with stable carrier envelope phase
  • 1,053 nanometer femtosecond pulse generation device with stable carrier envelope phase

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[0040] The wavelength of the incident light is 800 nanometers, the energy is 3.8 millijoules, the pulse width is 35 femtoseconds, and the repetition frequency is 1 KHz. In the tunable optical parametric amplification system, the nonlinear crystal used is BBO. After the laser pulse passes through the third-order collinear optical parametric amplification system, a femtosecond laser pulse with an energy of 600 microjoules and a wavelength of 2106 nanometers is obtained. The dichroic mirror pair (3), (4) has a reflectance of 99.5% in the 2106 nm band when the incident angle is 45°. The frequency doubling crystal (5) is a BBO crystal ( =21.6°, =0°, 0.3mm thick). The dichroic mirror pair (6), (7) has a reflectance of 99.5% in the 1053 nm band when the incident angle is 45°. Finally, in the 1053 nm band, the energy 120 microjoules, the pulse width 46 femtoseconds, and the contrast > 10 11 femtosecond pulses. The exposure time is 1 millisecond, and the measurement is 35 minut...

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Abstract

The invention discloses a 1,053 nanometer femtosecond pulse generation device with a stable carrier envelope phase. The 1,053 nanometer femtosecond pulse generation device structurally comprises an optical parametric amplification system, a dichroic mirror pair, a frequency multiplication crystal and another dichroic mirror pair, wherein the optical parametric amplification system outputs a femtosecond pulse with a stable carrier envelope phase and center wavelength of 2,106 nanometers; the dichroic mirror pair has high reflectivity at the wave band of 2,106 nanometers and high transmissivity at the wave band of 1,290 nanometers; the frequency multiplication crystal is used for multiplying the frequency of the femtosecond pulse with center wavelength of 2,106 nanometers to 1,053 nanometers; and the other dichroic mirror pair has high reflectivity close to the wave band of 1,053 nanometers and high transmissivity close to the wave band of 2,106 nanometers. The device provided by the invention has the characteristics of center wavelength close to 1,053 nanometers, tunable property, stable carrier envelope phase, super contrast, stable work and the like, and is particularly suitable for being used as a front-end seed source of a high-power super contrast chirped-pulse amplification system and the optical parametric amplification system with operation wavelength of 1,053 nanometers or 1,064 nanometers.

Description

technical field [0001] The invention relates to an ultrashort pulse laser, in particular to a 1053 nanometer femtosecond pulse generating device with a stable carrier envelope phase, which can generate femtosecond laser pulses with a stable carrier envelope phase, a central wavelength of 1053 nanometers, and ultra-high contrast. It is mainly suitable for high-power, high-contrast femtosecond laser systems, and is used in the research fields of high-intensity ultrafast laser technology and ultrafast strong field physics. Background technique [0002] In recent years, with the development of femtosecond laser technology, people can obtain more and more powerful femtosecond laser pulses. Ultra-intense and ultra-short laser pulses are important tools in many basic researches and play an irreplaceable role in the field of laser physics research. In particular, period-level ultrashort laser pulses have very important applications in the fields of high-order harmonics and attoseco...

Claims

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Application Information

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IPC IPC(8): H01S3/101H01S3/109
Inventor 黄延穂李妍妍王建州许毅冷雨欣徐至展
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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