Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for removing impurity trichlorosilane from silicon tetrachloride

A technology of trichlorosilane and silicon tetrachloride, applied in the direction of silicon halide compounds, halosilanes, etc., to achieve a complete and easy-to-control effect

Inactive Publication Date: 2012-07-11
BEIJING GUOJING INFRARED OPTICAL TECH
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon tetrachloride, which has been rectified twice, can achieve higher purity for metal impurities, but there is still a certain limit for the removal of trichlorosilane

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing impurity trichlorosilane from silicon tetrachloride
  • Method for removing impurity trichlorosilane from silicon tetrachloride
  • Method for removing impurity trichlorosilane from silicon tetrachloride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Press 3.5 L of crude silicon tetrachloride raw material into the reaction vessel, and feed nitrogen into the system as a protective atmosphere. Pass excessive chlorine gas into the raw material, and illuminate under the mercury lamp for 2 hours and 30 minutes. Turn off the light source, stop the light.

Embodiment 2

[0028] Press 5 L of crude silicon tetrachloride raw material into the reaction vessel, and feed argon into the system as a protective atmosphere. Pass excessive chlorine gas into the raw material, and irradiate under mercury lamp for 3 hours and 25 minutes. Turn off the light source, stop the light.

[0029] Silicon tetrachloride purified according to the above process conditions has no absorption at the fundamental frequency of trichlorosilane in its infrared spectrum, which fully meets the requirements of silicon tetrachloride for optical fiber on the content of trichlorosilane.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for removing an impurity trichlorosilane from silicon tetrachloride. Commercially available rough silicon tetrachloride is taken as a raw material, an inactive or inert gas is taken as a protective atmosphere, and chlorine is introduced and reacted with the trichlorosilane to generate the silicon tetrachloride under a lighting condition, so that the aim of removing the trichlorosilane is fulfilled. The method is quick and high in efficiency; and the fundamental frequency of the trichlorosilane in an infrared spectrogram of the purified silicon tetrachloride is not absorbed, and the requirements of the silicon tetrachloride for an optical fiber on the content of the trichlorosilane are met.

Description

technical field [0001] The invention belongs to the technical field of chemical industry, and in particular relates to a method for removing trichlorosilane impurities in silicon tetrachloride. Background technique [0002] Silicon tetrachloride is the main raw material for making optical fiber, accounting for 85%-95% of the total optical fiber composition. The purity of optical fiber raw materials directly affects the loss characteristics of optical fibers, and is the key to controlling the quality of optical fiber products. In order to ensure that the optical fiber has low loss, it is required that the impurity content in the raw material should not exceed 10 -9 The order of magnitude, that is, the purity requires more than 9 nines. Trichlorosilane is a common hydrogen-containing impurity in crude silicon tetrachloride. When synthesizing quartz glass, it can react with oxygen to generate water vapor, and diffuse in the glass to form hydroxyl groups. Hydroxide ions have ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/107
Inventor 苏小平王铁艳毛威莫杰袁琴刘福财武鑫萍
Owner BEIJING GUOJING INFRARED OPTICAL TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com