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Manufacturing method of static random access memory

A manufacturing method, static random technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low yield rate of static random access memory, electrical incompatibility between NMOS devices and PMOS devices, and reduce distance , Improve the effect of yield rate

Active Publication Date: 2014-07-30
SEMICON MFG INT (BEIJING) CORP
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Problems solved by technology

[0005] However, with the continuous reduction of the process node of semiconductor devices, the requirements for the manufacturing process of semiconductor devices are becoming more and more stringent. The NMOS devices and PMOS devices in the static random access memory devices manufactured by the existing technology are electrically incompatible, resulting in the manufacture of static random access memory devices. Memory yield is low

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  • Manufacturing method of static random access memory
  • Manufacturing method of static random access memory
  • Manufacturing method of static random access memory

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Embodiment Construction

[0021] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0023] As mentioned in the background technology section, the existing SRAM manufacturing process mainly changes the conditions of gate secondary oxidation, the thickness of the sidewall of silicon nitride, the energy of ion implantation, and the etching process in the process of manufacturing semiconductor devices. The problem of incompatibility between devices in the manufactured SRAM is improved, but the improvement effect of these meth...

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Abstract

A manufacturing method of a static random access memory. The static random access memory contains both an NMOS device and a PMOS device. The present invention wet-cleans the NMOS devices and PMOS devices in the static random access memory after the PMOS device source / drain lightly doped ion implantation. The sidewall spacer reduces the distance between the source / drain lightly doped regions of the NMOS device formed after wet cleaning, improves the electrical properties of the NMOS device, and makes it match the electrical properties of the PMOS device in the static random access memory, improving The yield rate of the manufactured static random access memory is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, the present invention relates to a method for manufacturing a SRAM. Background technique [0002] With the continuous development of modern high-tech industries represented by electronic communication technology, the total output value of the world's integrated circuit industry is growing at a rate of 30% every year. Static random access memory is an important component in integrated circuits, with small size and high density. Among semiconductor memory devices, Static Random Access Memory (SRAM) has advantages of lower power consumption and faster operation speed than Dynamic Random Access Memory (DRAM) devices. Static random access memory can easily locate the physical unit through the bitmap test equipment to study the effective mode of the product. In addition, the yield rate of the SRAM can be used as an important index to measure the yield rate of the...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8244H01L21/02H01L21/336H10B10/00
Inventor 刘焕新宋伟基
Owner SEMICON MFG INT (BEIJING) CORP
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