Unlock instant, AI-driven research and patent intelligence for your innovation.
Adhesive film for semiconductor device, and semiconductor device
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A kind of adhesive film and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid device manufacturing, semiconductor/solid device components, etc., can solve the problems of electrical signal leakage and attenuation
Inactive Publication Date: 2012-07-11
NITTO DENKO CORP
View PDF10 Cites 4 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
In addition, Patent Document 3 describes that electric signal leakage is attenuated by the magnetic loss characteristics of the ferrite layer using this electromagnetic wave shielding sheet for bonding semiconductor elements.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0166]
[0167] The following (a) to (f) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
[0169] (b) Epoxy resin 1 (manufactured by JER Corporation, Epicoat 1004) 242 parts
[0170] (c) Epoxy resin 2 (manufactured by JER Corporation, Epicoat 827) 220 parts
[0171] (d) 489 parts of phenolic resin (Mirex XLC-4L manufactured by Mitsui Chemicals, Ltd.)
[0172] (e) 660 parts of spherical silica (manufactured by Admatex Co., Ltd., SO-25R)
[0173] (f) Thermal curing catalyst (manufactured by Shikoku Chemicals Co., Ltd., C11-Z) 3 parts
[0174] After coating this adhesive composition solution on a release-treated film (release liner) composed of a polyethylene terephthalate film with a thickness of 50 μm after silicone release treatment, ...
Embodiment 2
[0185]
[0186] Between the adhesive layer A and the adhesive layer B, a SUS304 (stainless steel) foil with a thickness of 38 μm was pasted under the conditions of 80° C., a bonding pressure of 0.3 MPa, and a bonding speed of 10 mm / sec to produce an adhesive film for semiconductor devices with a thickness of 108 μm. In addition, SUS304 foil has a function as an electromagnetic wave shielding layer.
Embodiment 3
[0188]
[0189] An aluminum layer having a thickness of 500 nm was formed on the adhesive layer A by a sputtering method using a sputtering apparatus (manufactured by ULVAC, SH-550). Sputtering conditions are as follows.
[0197] Then, the adhesive layer B was pasted on the aluminum layer under the conditions of 80° C., a bonding pressure of 0.3 MPa, and a bonding speed of 10 mm / sec to prepare an adhesive film for a semiconductor device with a thickness of 70.5 μm. In addition, the aluminum layer has a function as an electromagnetic wave shielding layer.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention relates to an adhesive film for semiconductor device and a semiconductor device. An object of the present invention is to decrease the influence of an electromagnetic wave emitted from one semiconductorchip on other semiconductor chips in the same package, amounted substrate, adjacent devices, and the package. The present invention provides an adhesive film for a semiconductor device having an adhesive layer and an electromagnetic wave shielding layer, in which the attenuation of the electromagnetic wave that penetrates the adhesive film for a semiconductor device is 3 dB or more in at least a portion of the frequency range of 50 MHz to 20 GHz.
Description
technical field [0001] The present invention relates to an adhesive film for semiconductor devices used in the manufacture of semiconductor devices. Moreover, this invention relates to the semiconductor device which has this adhesive film for semiconductor devices. Background technique [0002] In recent years, in order to meet demands for miniaturization and higher functionality of semiconductor devices, the wiring width of power supply lines and the spacing between signal lines arranged over the entire area of the main surface of a semiconductor chip (semiconductor element) have gradually become narrower. Therefore, the increase in impedance and signal interference between signal lines of heterogeneous nodes will hinder the full performance of semiconductor chips in terms of operating speed, operating voltage tolerance, and electrostatic breakdown resistance. [0003] Conventionally, in order to solve the above-mentioned problems, package structures of stacked semicondu...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.