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Adhesive film for semiconductor device, and semiconductor device

A kind of adhesive film and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid device manufacturing, semiconductor/solid device components, etc., can solve the problems of electrical signal leakage and attenuation

Inactive Publication Date: 2012-07-11
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, Patent Document 3 describes that electric signal leakage is attenuated by the magnetic loss characteristics of the ferrite layer using this electromagnetic wave shielding sheet for bonding semiconductor elements.

Method used

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  • Adhesive film for semiconductor device, and semiconductor device
  • Adhesive film for semiconductor device, and semiconductor device
  • Adhesive film for semiconductor device, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0166]

[0167] The following (a) to (f) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

[0168] (a) 100 parts of acrylate-based polymer mainly composed of ethyl acrylate-methyl methacrylate (manufactured by Negami Industry Co., Ltd., Paracross W-197CM)

[0169] (b) Epoxy resin 1 (manufactured by JER Corporation, Epicoat 1004) 242 parts

[0170] (c) Epoxy resin 2 (manufactured by JER Corporation, Epicoat 827) 220 parts

[0171] (d) 489 parts of phenolic resin (Mirex XLC-4L manufactured by Mitsui Chemicals, Ltd.)

[0172] (e) 660 parts of spherical silica (manufactured by Admatex Co., Ltd., SO-25R)

[0173] (f) Thermal curing catalyst (manufactured by Shikoku Chemicals Co., Ltd., C11-Z) 3 parts

[0174] After coating this adhesive composition solution on a release-treated film (release liner) composed of a polyethylene terephthalate film with a thickness of 50 μm after silicone release treatment, ...

Embodiment 2

[0185]

[0186] Between the adhesive layer A and the adhesive layer B, a SUS304 (stainless steel) foil with a thickness of 38 μm was pasted under the conditions of 80° C., a bonding pressure of 0.3 MPa, and a bonding speed of 10 mm / sec to produce an adhesive film for semiconductor devices with a thickness of 108 μm. In addition, SUS304 foil has a function as an electromagnetic wave shielding layer.

Embodiment 3

[0188]

[0189] An aluminum layer having a thickness of 500 nm was formed on the adhesive layer A by a sputtering method using a sputtering apparatus (manufactured by ULVAC, SH-550). Sputtering conditions are as follows.

[0190] (sputtering condition)

[0191] Target: aluminum

[0192] Discharge output power: DC 600W (output power density 3.4W / cm 2 )

[0193] System internal pressure: 0.56Pa

[0194] Ar flow: 40sccm

[0195] Substrate temperature: unheated

[0196] Film forming speed: 20nm / min

[0197] Then, the adhesive layer B was pasted on the aluminum layer under the conditions of 80° C., a bonding pressure of 0.3 MPa, and a bonding speed of 10 mm / sec to prepare an adhesive film for a semiconductor device with a thickness of 70.5 μm. In addition, the aluminum layer has a function as an electromagnetic wave shielding layer.

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PUM

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Abstract

The invention relates to an adhesive film for semiconductor device and a semiconductor device. An object of the present invention is to decrease the influence of an electromagnetic wave emitted from one semiconductor chip on other semiconductor chips in the same package, amounted substrate, adjacent devices, and the package. The present invention provides an adhesive film for a semiconductor device having an adhesive layer and an electromagnetic wave shielding layer, in which the attenuation of the electromagnetic wave that penetrates the adhesive film for a semiconductor device is 3 dB or more in at least a portion of the frequency range of 50 MHz to 20 GHz.

Description

technical field [0001] The present invention relates to an adhesive film for semiconductor devices used in the manufacture of semiconductor devices. Moreover, this invention relates to the semiconductor device which has this adhesive film for semiconductor devices. Background technique [0002] In recent years, in order to meet demands for miniaturization and higher functionality of semiconductor devices, the wiring width of power supply lines and the spacing between signal lines arranged over the entire area of ​​the main surface of a semiconductor chip (semiconductor element) have gradually become narrower. Therefore, the increase in impedance and signal interference between signal lines of heterogeneous nodes will hinder the full performance of semiconductor chips in terms of operating speed, operating voltage tolerance, and electrostatic breakdown resistance. [0003] Conventionally, in order to solve the above-mentioned problems, package structures of stacked semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/552
CPCH01L2924/01042H01L24/29H01L2224/73265C09J2203/326H01L2924/01045H01L2224/48091H01L2924/01088H01L2924/0132H01L2924/01059H01L2924/01078H01L24/48H01L24/16H01L2224/29298H01L2924/01063H01L2924/01041H01L21/58H01L24/45H01L2924/01024H01L2924/01005H01L2924/01057H01L2224/29355H01L2224/2919H01L2224/45144H01L2924/01013H01L2924/01056H01L2224/92247H01L23/552H01L2224/29101H01L2224/83191H01L2224/48247H01L21/6836H01L2924/01012H01L2924/0665H01L2224/29344H01L2924/01015H01L2224/83862H01L2924/01044H01L2924/01051H01L2224/29347H01L24/83H01L2224/2929H01L2924/01058H01L2224/27436H01L2224/32225H01L25/0657H01L2924/15747H01L2924/0105H01L2225/06537H01L2924/00013H01L2924/01055H01L2924/01047H01L2224/29324H01L2224/16225H01L2924/01076H01L2224/45124H01L2924/01006H01L2924/01072C09J7/0292H01L2924/3011H01L2924/01073H01L2924/01079H01L2224/45147H01L2225/0651H01L2924/01074H01L2224/32245H01L2924/01038H01L2224/29339H01L2924/0103H01L2224/32145H01L2924/01082H01L2924/0104H01L2221/68327H01L2924/014H01L2924/01023H01L2224/29H01L2924/01029H01L2924/01037H01L24/27H01L2924/0133H01L2924/01019H01L24/32H01L2924/01077H01L2224/48227H01L2924/01033H01L2924/3025H01L2924/0102H01L24/81H01L2924/01075H01L2924/181H01L24/73Y10T428/28H01L21/30H01L21/78H01L2924/00014H01L2924/00H01L2924/01014H01L2924/01026H01L2924/01028H01L2924/3512H01L2924/00012H01L2224/29099H01L2224/29199H01L2224/29299
Inventor 宇圆田大介松村健井上刚一盛田美希
Owner NITTO DENKO CORP