Purifying method for high-purity silica sol

A silica sol, high-purity technology, applied in the direction of silicon oxide, silicon dioxide, etc., to achieve the effect of good sedimentation performance, good water solubility, and short purification time

Inactive Publication Date: 2012-07-18
SHENZHEN LEAGUER MATERIAL +2
View PDF10 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method has made great breakthroughs, the process is relatively simple, and the industrialization efficiency is high, but it needs to be optimized.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Purifying method for high-purity silica sol

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Strong-acid cation exchange resins have exchange groups -SO on the resin skeleton 3 The cation exchange resin for H is Dowex 50W; the strong base anion exchange resin has an exchange group -N on the resin skeleton. + (CH 3 ) 3 Cl - or -N + (CH 3 ) 3 C 2 h 4 OHCl - Anion exchange resin, choose Dowex 1.

[0044] The silicon dioxide content in the silica sol to be purified is 20%, the particle diameter is 40nm, the metal ion content is about 3000ppm, and the anion content is about 300ppm. The purification method steps of high-purity silica sol are as follows:

[0045] (1) Regenerate the strong acid type cation exchange resin and the strong base type anion exchange resin respectively;

[0046] (2) Mix the regenerated strong acid type cation exchange resin and the strong base type anion exchange resin in a volume ratio of 10:1 to obtain a strong acid and strong base mixed resin, and pack into a container with cooling, heating and stirring;

[0047] (3) adding the...

Embodiment 2

[0052] Strong-acid cation exchange resins have exchange groups -SO on the resin skeleton 3 The cation exchange resin for H is Amberlite IR-120; the strong base anion exchange resin has an exchange group -N on the resin skeleton. + (CH 3 ) 3 Cl - or -N + (CH 3 ) 3 C 2 h 4 OHCl - Anion exchange resin, choose AmberliteIRA-400.

[0053] The silicon dioxide content in the silica sol to be purified is 40%, the particle size is 30nm, the metal ion content is about 2000ppm, and the anion content is about 650ppm. The purification method steps of high-purity silica sol are as follows:

[0054] (1) Regenerate the strong acid type cation exchange resin and the strong base type anion exchange resin respectively;

[0055] (2) Mix the regenerated strong acid type cation exchange resin and the strong base type anion exchange resin in a volume ratio of 3:1 to obtain a strong acid and strong base mixed resin, and pack into a container with cooling, heating and stirring;

[0056] (3)...

Embodiment 3

[0061] Strong-acid cation exchange resins have exchange groups -SO on the resin skeleton 3 The cation exchange resin of H is Amberlyst 15; the strong base anion exchange resin has an exchange group -N on the resin skeleton. + (CH 3 ) 3 Cl - or -N + (CH 3 ) 3 C 2 h 4 OHCl - The anion exchange resin used is Amberlite IRA-410.

[0062] The silicon dioxide content in the silica sol to be purified is 30%, the particle size is 10nm, the metal ion content is about 3000ppm, and the anion content is about 600ppm. The purification method steps of high-purity silica sol are as follows:

[0063] (1) Regenerate the strong acid type cation exchange resin and the strong base type anion exchange resin respectively;

[0064] (2) mix the regenerated strong acid type cation exchange resin and the strong base type anion exchange resin in a volume ratio of 5:1 to obtain a strong acid and strong base mixed resin, and pack into a container with cooling, heating and stirring;

[0065] (3)...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a purifying method of a high-purity silica gel, belonging to the technical field of chemical-mechanical polishing. The purifying method is suitable for purifying silica sol in the chemical-mechanical polishing of a super-large-scale integrated circuit. The purifying method comprises the following steps: uniformly mixing regenerated strong acid cation exchange resin with strong base type anion exchange resin; adding silica sol to be purified in a container filled with strong acid and strong base mixed resin and controlling the temperature, stirring to enable the silica sol to be purified and the strong acid and strong base mixed resin to be mixed uniformly and realizing dynamic purification; and adding a composite chelating agent and a flocculating agent in the dynamic purifying process of the silica sol and controlling the pH value to 1-5 to obtain the purified silica sol. The content of metal ions in the purified silica sol is reduced to ppb level; and the obtained high-purity silica sol can meet the requirement of a substrate or a chip polishing solution for new generation of line width on the purity of the silica sol.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, in particular to a purification method of high-purity silica sol. Background technique [0002] With the development of large-scale integrated circuits, the continuous emergence and improvement of new micro-manufacturing technologies and equipment, the semiconductor industry has been developing rapidly in accordance with "Moore's Law", that is, on an integrated circuit chip of the same size, the number of transistors accommodated will decrease. It has doubled every two years. In recent years, the development of integrated circuits has three main characteristics: ① The feature size is miniaturized, and the feature size is developed along the lines of 0.25um, 0.18um, 0.13um, 0.09um, and 0.045um, which is challenging silicon-based The limit of planar technology; ②Silicon single wafer has a larger diameter, the world's major IC companies have entered the stage of Φ300um, and Φ45...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/14
Inventor 顾忠华高源龚桦邹春莉潘国顺
Owner SHENZHEN LEAGUER MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap