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Double-crucible device for growing single crystals through induction heating physical vapor phase transfer

A technology of physical vapor transmission and induction heating, which is applied in crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high cost, achieve the effects of prolonging service life, simplifying process and reducing consumption

Inactive Publication Date: 2012-07-18
BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the defects of one-time use of the crucible and high cost caused by the existing single crucible, and provide a double-crucible device, in which the outer crucible can be used multiple times, which is easy to operate and low in cost

Method used

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  • Double-crucible device for growing single crystals through induction heating physical vapor phase transfer
  • Double-crucible device for growing single crystals through induction heating physical vapor phase transfer

Examples

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Effect test

Embodiment 1

[0015] A silicon carbide single crystal with a diameter of 6 inches was grown using the device of the present invention and the induction heating physical vapor transport method. Two sets of coaxial high-purity graphite crucibles (referred to as "double crucibles") are used. The inner diameter of the outer crucible is 200mm, the outer diameter is 250mm, the outer height is 300mm, and the inner cavity height is 250mm; the inner crucible is only used to hold raw materials (put At the bottom of the crucible) and seed crystal (installed on the inner surface of the crucible lid), the inner diameter is 160 mm, the outer diameter is 180 mm, the outer height is 160 mm, and the inner cavity height is 120 mm. The inner crucible is coaxially placed on the bottom of the outer crucible, and the inner crucible is sealed with a crucible cover, while the outer crucible does not have a crucible cover, so that the inner crucible can be taken out easily. After the growth is over, take out the in...

Embodiment 2

[0017] An aluminum nitride single crystal with a diameter of 1 inch is grown by using the device of the present invention and the induction heating physical vapor transport method. Two sets of coaxial tantalum crucibles (referred to as "double crucibles") are used. The inner diameter of the outer crucible is 41 mm, the outer diameter is 80 mm, the outer height is 80 mm, and the inner cavity height is 60 mm; the inner crucible is only used to hold raw materials (put in the crucible Bottom) and seed crystal (installed on the inner surface of the crucible lid), with an inner diameter of 30 mm, an outer diameter of 40 mm, an outer height of 50 mm, and an inner cavity height of 40 mm. The inner crucible is coaxially placed on the bottom of the outer crucible, and the inner and outer crucibles are sealed by crucible lids. After the growth is over, open the outer crucible cover, take out the inner crucible from the outer crucible, saw the inner crucible, and take out a 1-inch diamete...

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Abstract

A double-crucible device for growing single crystals through induction heating physical vapor phase transfer belongs to the technical field of single crystal growth and particularly relates to a device for growing the single crystals through induction heating physical vapor phase transfer. The double-crucible device comprises a heat preservation drum; an outer crucible is arranged in the heat preservation drum; an inner crucible is arranged in the outer crucible; and single crystal raw materials and seed crystals are arranged in the inner crucible. Compared with the prior art adopting a single crucible, the device has the advantages that the consumption of crucible materials with high melting points can be greatly reduced, and when the inner crucible is taken out, a heat preservation material can not be scraped off, thereby the service life of the heat preservation material is prolonged.

Description

technical field [0001] The invention belongs to the technical field of single crystal growth, in particular to a device for growing single crystal by induction heating physical vapor transmission. Background technique [0002] When growing single crystals by induction heating physical vapor transport method, it is necessary to use high melting point materials (such as: high-purity graphite, metal tantalum, tungsten, etc.) inner surface of the cover). At present, one crucible (hereinafter referred to as "single crucible") is generally used as both a heating element and a growth chamber, and the structure is relatively simple. However, in order to meet the requirements of heat generation and temperature field, the size of a single crucible needs to be much larger than that required for simple charging, and when taking out the formed single crystal, generally only the crucible can be destroyed. Therefore, a single crucible can only be used once, which leads to a large consump...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B13/20
Inventor 倪代秦吴星赵岩何丽娟王雷杨巍马晓亮李晋
Owner BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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