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Method for forming light-emitting diode device and substrate structure

A technology of light-emitting diodes and substrates, which is used in electrical components, circuits, semiconductor devices, etc.

Active Publication Date: 2015-09-30
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in these techniques, the quality of the regrown layer still needs further improvement

Method used

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  • Method for forming light-emitting diode device and substrate structure
  • Method for forming light-emitting diode device and substrate structure
  • Method for forming light-emitting diode device and substrate structure

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Experimental program
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Embodiment Construction

[0035] According to an embodiment of the present invention, a growth substrate for growing light-emitting diodes is provided, wherein the material of the growth substrate may include but not limited to germanium (Ge), gallium arsenide (gallium arsenide, GaAs), indium phosphide (indium phosphide, InP), sapphire, silicon carbide, silicon, lithium aluminum oxide (LiAlO 2 ), zinc oxide (zincoxide, ZnO), gallium nitride (gallium nitride, GaN), aluminum nitride (aluminum nitride), etc.

[0036] Such as figure 1 As shown in the figure, to form a semiconductor nanostructure with semiconductor nanopillars 5 on a gallium nitride template 2 as shown in the figure, the fabrication process is as follows: First, a gallium nitride template is first formed on the c-plane of the sapphire substrate 1 2. Wherein, forming the GaN template 2 includes first growing a GaN nucleation layer (not shown) with a height of about 40 nanometers at a growth temperature of 530° C., and then growing a layer ...

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Abstract

The invention discloses a luminous diode device and a formation method of a base plate structure thereof. The luminous diode device comprises a base plate, a dielectric layer, a plurality of semiconductor nano structures, a semiconductor layer and a luminous diode structure, wherein the base plate is provided with a first growth surface and a bottom surface corresponding to the first growth surface; the dielectric layer is arranged on the first growth surface and is provided with a plurality of openings; the semiconductor nano structures are formed on the base plate and are protruded outside the openings; the semiconductor layer is formed on each semiconductor nano structure and is provided with a second growth surface which is substantially parallel to the bottom surface; the luminous diode structure is formed on the second growth surface; and at least one opening is provided with a first diameter, a nano structure and a second diameter, wherein the first diameter is less than 250nm, the nano structure corresponds to the at least one opening, and the second diameter is larger than the first diameter.

Description

technical field [0001] The present invention relates to a substrate structure and a light-emitting diode device made by using the substrate structure, in particular to a light-emitting diode device with a semiconductor nanostructure and a method for manufacturing the substrate structure. Background technique [0002] When semiconductor nanostructures form nano-columnar structures, due to the characteristics of releasing the stress of the structure itself and reducing the generation of defects when the structure itself grows laterally, Gallium Nitride (Gallium Nitride) is formed on a sapphire substrate (Sapphire) or a silicon (Silicon) substrate. , GaN) semiconductor nanocolumn structure has become an attractive technology. Growth of gallium nitride material on semiconductor nanostructures can achieve higher epitaxial structural quality. However, from the perspective of fabricating the LED structure, it is more preferred to grow the semiconductor epitaxial layer of the LED s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/12
Inventor 杨鸿志许明祺徐大正杨志忠唐宗毅陈永升萧文裕廖哲浩沈豫俊颜胜宏
Owner EPISTAR CORP