Graphene/ stannic oxide nanometer compounding resistance type film gas sensor and manufacturing method thereof

A gas sensor, tin dioxide technology, applied in the direction of material resistance, etc., can solve the problems that the working temperature affects the stability of the sensor, it is difficult to prepare a portable instrument, and it is not suitable for use, and achieves good response reversibility, fast response reversibility, The effect of promoting gas adsorption and diffusion

Inactive Publication Date: 2012-08-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes its energy consumption high and it is difficult to prepare portable instruments
At the same time, the high working temperature affects the stability of the sensor, and it is not suitable for use in places with explosive gases, which limits its application to a certain extent.

Method used

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  • Graphene/ stannic oxide nanometer compounding resistance type film gas sensor and manufacturing method thereof
  • Graphene/ stannic oxide nanometer compounding resistance type film gas sensor and manufacturing method thereof
  • Graphene/ stannic oxide nanometer compounding resistance type film gas sensor and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Clean the surface photolithography and evaporate the ceramic substrate with interdigitated gold electrodes, and dry it for later use;

[0026] (2) Prepare a graphene oxide aqueous solution with a concentration of 0.01 mg / mL, then add tin dichloride dihydrate and urea, the weight ratio of graphene oxide aqueous solution, tin dichloride dihydrate and urea is 1:0.00225:0.01, stir and ultrasonic vibration to make sufficient mixing to prepare a precursor solution, add the precursor solution to a hydrothermal kettle and react at 80°C for 2 hours to prepare a graphene / tin dioxide nanocomposite solution;

[0027] (3) The graphene / tin dioxide nanocomposite solution prepared in step (2) was drip-coated on the surface of the interdigitated gold electrode with a ceramic substrate in step (1), and heat-treated at 140°C for 0.5 hours to prepare graphene / SnO nanocomposite resistive thin film gas sensor.

Embodiment 2

[0029] (1) Clean the surface photolithography and evaporate the ceramic substrate with interdigitated gold electrodes, and dry it for later use;

[0030] (2) Prepare a graphene oxide aqueous solution with a concentration of 5 mg / mL, then add tin dichloride dihydrate and urea, the weight ratio of graphene oxide aqueous solution, tin dichloride dihydrate and urea is 1:0.00225:0.005, stir and ultrasonic vibration to fully mix to obtain a precursor solution, add the precursor solution to a hydrothermal kettle and react at 100°C for 12 hours to obtain a graphene / tin dioxide nanocomposite solution;

[0031] (3) The graphene / tin dioxide nanocomposite solution prepared in step (2) was drip-coated on the surface of the interdigitated gold electrode with a ceramic substrate in step (1), and heat-treated at 80°C for 3 hours to obtain graphene / SnO nanocomposite resistive thin film gas sensor.

Embodiment 3

[0033] (1) Clean the surface photolithography and evaporate the ceramic substrate with interdigitated gold electrodes, and dry it for later use;

[0034] (2) Prepare a graphene oxide aqueous solution with a concentration of 5 mg / mL, then add tin dichloride dihydrate and urea, the weight ratio of graphene oxide aqueous solution, tin dichloride dihydrate and urea is 1:0.0225:0.025, stir and ultrasonic vibration to mix thoroughly to obtain a precursor solution, add the precursor solution to a hydrothermal kettle and react at 120°C for 12 hours to obtain a graphene / tin dioxide nanocomposite solution;

[0035] (3) The graphene / tin dioxide nanocomposite solution prepared in step (2) was drip-coated on the surface of the interdigitated gold electrode with ceramic substrate in step (1), and heat-treated at 100°C for 2 hours to obtain graphene / SnO nanocomposite resistive thin film gas sensor.

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Abstract

The invention discloses a graphene/ stannic oxide nanometer compounding resistance type film gas sensor, which takes ceramics as a basal body. The surface of the ceramic basal body is photo-etched and evaporated with multiple pairs of interdigital gold electrodes, and is coated with gas-sensitive films of graphene and stannic oxide nanometer composite, and the manufactured resistance type film gas sensor has the advantages of simple manufacturing process and low cost. The gas-sensitive film is composed of a grapheme namosheet layer in a three-dimensional nano-structure and stannic oxide crystal particle composite with an orientated growth characteristic, the introduction of the graphene can favorably reduce the resistance of sensor elements, and the formation of the three-dimensional nano-structure can obviously enhance the specific surface area of the composite, thus the absorption and the diffusion of the gas can be promoted so as to greatly enhance the room temperature gas sensitive response sensitivity of elements. The graphene/stannic oxide nanometer compounding resistance type film gas sensor has the characteristics of high response sensitivity to low concentration ammonia, fast response, favorable recovering performanc, capability of carrying out the detection at the room temperature, and the like, which can be widely applied in the agricultural and industrial production process, and the room temperature detection and control of the concentration of ammonia in the atmospheric environment.

Description

technical field [0001] The invention relates to a nanocomposite resistive thin film gas sensor with room temperature gas sensitive response characteristics and a manufacturing method thereof, in particular to a graphene / tin dioxide nanocomposite resistive thin film gas sensor and a manufacturing method thereof. Background technique [0002] The progress of society and the development of technology provide a broad space for the research and application of sensors. Gas sensors are an important class of chemical sensors, which are widely used in industrial production, process control, environmental monitoring and protection, and anti-terrorism, and play an increasingly important role in the development of modern science and technology and people's lives. The development of high-performance gas sensors with the advantages of high sensitivity, low cost, miniaturization, and low power consumption has attracted widespread attention at home and abroad. To optimize sensor performance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04
Inventor 李扬杨慕杰林乾乾
Owner ZHEJIANG UNIV
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