Programming method of non-volatile memory device

Abstract

The invention discloses a programming method of a non-volatile memory device, belonging to the technical field of non-volatile memory devices. When the memory device is of a stack grid non-volatile memory device, the method comprises the following steps of: before programming, applying a negative pulse with predetermined pulse width and voltage on a drain electrode and / or a source electrode of the non-volatile memory device; and when programming, applying a forward synchronous pulse with the same pulse width on a grid electrode and the drain electrode, or the grid electrode and the source electrode. In the programming method, the range of an electron injection region when performing the hot electron injection programming is expanded, and the number of injected electrons is increased, thus, the electron injection efficiency is improved, and a memory window is enlarged. Simultaneously, with the expanded injection range, damages to a tunneling medium layer caused by electron narrow-range injection can be reduced effectively, the reliability of the non-volatile memory device is improved, the retention time of the electric charges in a storage layer is prolonged and the number of times of programming / erasing of the memory device is increased.

Description

technical field [0001] The invention belongs to the technical field of non-volatile memory, in particular to a programming method of the non-volatile memory. Background technique [0002] Due to the characteristics of non-volatile semiconductor memory that can still save information after power failure, high access speed, easy erasing and rewriting, and low power consumption, it quickly became the semiconductor memory family. It is a hot field, and its market is developing rapidly, and it has attracted extensive attention from industry and academia. [0003] The programming of the traditional stacked gate non-volatile memory generally adopts FN direct tunneling or channel hot electron injection (CHE), and electrons are tunneled from the substrate into the floating gate for storage. The operating voltage required by the FN direct tunneling mode is relatively high, the programming speed is relatively slow, and the obtained storage window is relatively small. When using the ...

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Problems solved by technology

[0005] However, both CHE programming and SSI programming belong to "point" programming, electrons can only enter the charge storage layer in a small area, the injection range is small, and the number of injected electrons is small, so the injection efficiency is low and the storage window is small. Small

On the other hand, this small-scale electron injection will cause serious damage to the tunnel dielectric layer in the injection area, thus affecting the reliability of the memory (such as data retention time, etc.)

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