SOI (silicon on insulator) device for restraining current leakage of back gate arising from radiation and preparation method thereof

Abstract

The invention discloses an SOI (silicon on insulator) device for restraining the current leakage of a back gate arising from radiation and a preparation method thereof. The SOI device disclosed by the invention comprises a semiconductor substrate, a buried oxide layer, a semiconductor body area, a gate area, a source area, a drain area, a gate-side wall and an LDD (laser detector diode) area, wherein two insulating and protecting layers for preventing the generation of leakage paths are introduced in the semiconductor body area, and the insulating and protecting layers are positioned right above the buried oxide layer in the semiconductor body area and respectively tightly adjacent to the source area and the drain area. Because the band gap of each insulating and protecting layer in the invention is far greater than that of a silicon material, the movement of an inversion electron between the source area and the drain area needs to overcome a great barrier height, and an inversion conductive channel of the back gate is hard to form, thereby restraining the occurrence of current leakage of the back gate in the process of radiation. According to the invention, based on a conventional process for SOI devices, the preparation method is simple, and no photolithography mask is required to be introduced; and meanwhile, because the insulating and protecting layers do not extend to a whole back gate channel, the influence on the threshold voltage of a front gate is reduced.

Description

technical field [0001] The invention relates to an SOI device, in particular to an SOI device capable of suppressing back gate leakage current caused by radiation and a preparation method thereof. Background technique [0002] Compared with traditional bulk silicon devices, SOI field effect transistors have the advantages of small parasitic capacitance and low device power consumption, and SOI devices eliminate the latch-up effect, and are used in high-performance VLSI, high-speed storage devices, low-power circuits, High temperature sensors and other fields have extremely broad application prospects. However, when the electronic system composed of SOI devices is used in space radiation environment, nuclear radiation environment, simulated source environment and ground radiation environment, although the buried oxide layer suppresses the interference of the pulse current of the substrate, charged ions such as photons, electrons and high-energy ions are still Serious ionizat...

AI Technical Summary

Problems solved by technology

The ionization damage effect creates a leakage channel in the buried oxide layer of the SOI device, which will increase the off-state leakage current of the SOI device and the power consumption of the device, and will cause a series of reliability problems

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