Magnetic random access memory and manufacturing method thereof
A technology of random access memory and manufacturing method, which is applied in static memory, digital memory information, manufacturing/processing of electromagnetic devices, etc., and can solve the problems of reduced current value and inability to ensure current, etc.
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no. 1 approach
[0016] Hereinafter, the magnetic random access memory according to the first embodiment will be described. figure 1 as well as figure 2 It is a cross-sectional view showing a memory cell in the magnetic random access memory according to the first embodiment.
[0017] Such as figure 1 As shown, a selection transistor is embedded in the surface portion of a semiconductor substrate, for example, a silicon substrate 1 . The selection transistor includes a gate insulating film 2 , a gate electrode 3 , a source diffusion layer 4 and a drain diffusion layer 5 .
[0018] For the silicon substrate 1 , for example, a p-type silicon substrate is used. A gate electrode 3 is embedded in the surface portion of the silicon substrate 1 . For the gate electrode 3, polysilicon, W, or the like is used, for example. Gate insulating film 2 is embedded in silicon substrate 1 so as to cover gate electrode 3 . For the gate insulating film 2, for example, a silicon oxide film is used. The heig...
no. 2 approach
[0053] Regarding the magnetic random access memory according to the second embodiment of the present invention, using Figure 4 Be explained. Regarding the configuration of the second embodiment, for the figure 1 The same components of the magnetic random access memory of the first embodiment are denoted by the same symbols, and detailed description thereof will be omitted.
[0054] The magnetic random access memory according to the second embodiment is the same as that of the first embodiment in that buried transistors are used. On the other hand, the second embodiment is different from the first embodiment in that the embedded transistor is not buried in the silicon substrate 1 but is buried in a semiconductor layer such as the silicon film 18 . Specifically, the difference is that instead of embedding the gate insulating film 2 and the gate electrode 3 in the silicon substrate 1, the gate insulating film 2 and the gate electrode 3 are provided on the silicon substrate 1 s...
no. 3 approach
[0067] Regarding the magnetic random access memory according to the third embodiment of the present invention, using Figure 6 Be explained. Regarding the configuration of the third embodiment, for the figure 1 The same components of the magnetic random access memory of the first embodiment shown are denoted by the same symbols, and detailed description thereof will be omitted.
[0068] The third embodiment differs from the first embodiment in that the gate insulating film 2 and the gate electrode 3 are not embedded in the silicon substrate 1 but are provided on the silicon substrate 1 .
[0069] For the manufacturing method of the magnetic random access memory in the third embodiment of the present invention, using Figure 7A to Figure 7F Be explained.
[0070] Such as Figure 7A As shown, a gate insulating film 2 and a gate electrode 3 are deposited on a silicon substrate 1, and the gate insulating film 2 and the gate electrode 3 are formed by photolithography and RIE. ...
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