Cleaning method for MOCVD equipment

Abstract

A cleaning method for MOCVD (Metal Organic Chemical Vapor Deposition) equipment comprises the following steps: feeding cleaning gas to a reaction chamber of the MOCVD equipment; processing the cleaning gas into plasma through a plasma processing device; increasing the temperature of the inner wall of the reaction chamber to 50 to 250 DEG C; and utilizing the plasma of the cleaning gas to clean the inner wall of the reaction chamber at the temperature of 50 to 250 DEG C. When the cleaning method is adopted, residual sediment on the inner wall of the MOCVD reaction chamber can be removed automatically, the plasma of the cleaning gas causes no damage to the inner wall of the MOCVD reaction chamber, and less time is spent in cleaning.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for cleaning MOCVD equipment. Background technique [0002] At present, metal organic compound chemical vapor deposition (MOCVD) process is a common process for forming compounds of group III elements and group V elements. The MOCVD process is usually carried out in an MOCVD reaction chamber with a relatively high temperature, and the first reaction gas containing Group III elements and the second reaction gas containing Group V elements are introduced into the MOCVD reaction chamber, and There is a substrate on the base in the MOCVD reaction chamber, and the first reaction gas and the second reaction gas react on the surface of the substrate at a higher temperature to form Group III elements and V elements on the surface of the substrate. Thin films of group element compounds. [0003] However, when a thin film is formed on the surface of the substrate by us...

AI Technical Summary

Problems solved by technology

Since MOCVD equipment cannot deposit thin films during manual cleaning, and the cooling and heating process takes a lot of time, the production efficiency and production capacity of MOCVD equipment cannot be maximized.

And because the cleaning method is manual cleaning, not only does the operator need to remove the residual deposits by himself, which increases the work intensity of the operators, but also the degree of cleaning will be inconsistent each time, and the residual deposits may not be cleaned due to operator errors. Clean, residual deposits may eventually fall on the subsequent substrate to be processed, causing defects in the film formed on the corresponding substrate surface, affecting the electrical properties of the final semiconductor device

Images