Cleaning method for MOCVD equipment

Abstract

A cleaning method for MOCVD (Metal Organic Chemical Vapor Deposition) equipment comprises the following steps: feeding cleaning gas to a reaction chamber of the MOCVD equipment; processing the cleaning gas into plasma through a plasma processing device; increasing the temperature of the inner wall of the reaction chamber to 50 to 250 DEG C; and utilizing the plasma of the cleaning gas to clean the inner wall of the reaction chamber at the temperature of 50 to 250 DEG C. When the cleaning method is adopted, residual sediment on the inner wall of the MOCVD reaction chamber can be removed automatically, the plasma of the cleaning gas causes no damage to the inner wall of the MOCVD reaction chamber, and less time is spent in cleaning.

Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for cleaning MOCVD equipment. Background technique

[0002] At present, metal organic compound chemical vapor deposition (MOCVD) process is a common process for forming compounds of group III elements and group V elements. The MOCVD process is usually carried out in an MOCVD reaction chamber with a relatively high temperature, and the first reaction gas containing Group III elements and the second reaction gas containing Group V elements are introduced into the MOCVD reaction chamber, and There is a substrate on the base in the MOCVD reaction chamber, and the first reaction gas and the second reaction gas react on the surface of the substrate at a higher temperature to form Group III elements and V elements on the surface of the substrate. Thin films of group element compounds.

[0003] However, when a thin film is formed on the surface of the substrate by us...

Examples

Embodiment Construction

[0026] As mentioned in the background technology, manual cleaning of the residual deposits on the inner wall of the MOCVD reaction chamber not only takes a lot of time, but the production efficiency and production capacity of the MOCVD equipment cannot be maximized, and the degree of manual cleaning is inconsistent each time. , the residual deposits may not be cleaned up due to operator error.

[0027] For this reason, the inventor has proposed a kind of cleaning method of MOCVD equipment, comprises: in the reaction chamber of described MOCVD equipment, pass cleaning gas; The temperature is raised to 50° C. to 250° C., at which temperature the inner wall of the reaction chamber is cleaned with a plasma of cleaning gas. The inventors have found through research that as the temperature increases, the removal rate of the residual deposits on the inner wall of the reaction chamber by the plasma of the cleaning gas gradually becomes faster. The inner wall of the reaction chamber c...

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for cleaning MOCVD equipment. Background technique

[0002] At present, metal organic compound chemical vapor deposition (MOCVD) process is a common process for forming compounds of group III elements and group V elements. The MOCVD process is usually carried out in an MOCVD reaction chamber with a relatively high temperature, and the first reaction gas containing Group III elements and the second reaction gas containing Group V elements are introduced into the MOCVD reaction chamber, and There is a substrate on the base in the MOCVD reaction chamber, and the first reaction gas and the second reaction gas react on the surface of the substrate at a higher temperature to form Group III elements and V elements on the surface of the substrate. Thin films of group element compounds.

[0003] However, when a thin film is formed on the surface of the substrate by us...

Examples

Embodiment Construction

[0026] As mentioned in the background technology, manual cleaning of the residual deposits on the inner wall of the MOCVD reaction chamber not only takes a lot of time, but the production efficiency and production capacity of the MOCVD equipment cannot be maximized, and the degree of manual cleaning is inconsistent each time. , the residual deposits may not be cleaned up due to operator error.

[0027] For this reason, the inventor has proposed a kind of cleaning method of MOCVD equipment, comprises: in the reaction chamber of described MOCVD equipment, pass cleaning gas; The temperature is raised to 50° C. to 250° C., at which temperature the inner wall of the reaction chamber is cleaned with a plasma of cleaning gas. The inventors have found through research that as the temperature increases, the removal rate of the residual deposits on the inner wall of the reaction chamber by the plasma of the cleaning gas gradually becomes faster. The inner wall of the reaction chamber c...

Images