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Thin film stress measuring device with vertical optical path structure and application thereof

A technology of thin film stress and measuring device, which is applied in the direction of measuring the change force of optical properties when the material is under stress, can solve the problems of the complexity and difficulty of the optical path layout and installation of the instrument, and simplify the optical path layout and installation. Adjusting requirements and improving the effect of measurement accuracy

Active Publication Date: 2013-12-11
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the multi-beams are obliquely incident at an angle α to the normal of the substrate under test, which leads to the oblique arrangement of the optical path system, which brings certain complexity and difficulty to the layout and adjustment of the optical path of the instrument.

Method used

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  • Thin film stress measuring device with vertical optical path structure and application thereof
  • Thin film stress measuring device with vertical optical path structure and application thereof
  • Thin film stress measuring device with vertical optical path structure and application thereof

Examples

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Effect test

Embodiment 1

[0024] refer to figure 2 , a film stress measurement device with a vertical optical path structure, including a multi-beam pattern generator 13, a beam position detector 15, and a beam position separator 17, wherein the multi-beam pattern generator 13 and the beam position detector 15 are arranged perpendicularly to each other .

[0025] The multi-beam pattern generator 13 includes a laser 1 , an inverted telescopic collimating optical system 19 , a beam splitter 5 and a collimating lens 6 . Wherein, the inverted telescopic collimation optical system 19 is composed of two lenses 2, 4 and a diaphragm 3 located between the two lenses 2, 4. The beam splitter 5 can be one of a Fabry-Perot etalon, a diffraction grating, a digital micromirror device, a liquid crystal spatial light modulator or a liquid crystal optical phased array device. The single laser beam 21 emitted by the laser 1 is incident on the beam splitter 5 after undergoing beam spot size compression by the inverted ...

Embodiment 2

[0034] refer to image 3 Compared with the above-mentioned embodiment 1, the thin-film stress measuring device with vertical optical path structure in embodiment 2 only exchanges the positions of the multi-beam pattern generator 13 and the beam position detector 15, and also arranges them perpendicular to each other. Other components and arrangements have not been changed, so no more details are given here.

[0035] Therefore, the thin film stress measurement device with a vertical optical path structure proposed by the present invention improves the measurement accuracy of the thin film stress by arranging the multi-beam pattern generator and the beam position detector perpendicular to each other, and simplifies the optical path layout of the thin film stress measurement device and adjustment requirements.

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Abstract

The invention discloses a thin film stress measuring device with a vertical optical path structure and application thereof. The thin film stress measuring device comprises a multi-light beam pattern generator and a light beam position detector, which are mutually vertical. The thin film stress measuring precision can be improved, difficulty in the optical path layout and resetting of the thin film stress measuring device are reduced, and the thin film stress measuring device can be widely applied to a thin film stress out-of-line measuring device, thin film deposition equipment, material epitaxy equipment and the like.

Description

technical field [0001] The invention relates to a thin film stress measuring device in the field of photoelectric measurement, in particular to a thin film stress measuring device with a vertical optical path structure and its application. Background technique [0002] Thin film materials and technologies have been widely used in various fields of high-tech industries such as large-scale integrated circuits, electronic components, flat panel displays, information recording and storage, MEMS, solar cells, optical communications, and semiconductor lighting. In the process of thin film preparation, the mismatch of thermal expansion coefficient and lattice constant between the thin film and the substrate will lead to stress in the grown thin film, and the change of microstructure during the thin film growth process will also cause stress. Excessive film stress will lead to film cracking, curling and even shedding. It can be said that the size of the film stress directly affects...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/24
Inventor 方运王逸群王玮朱建军张永红张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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