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Method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays

A technology of single-walled carbon nanotubes and arrays, applied in the direction of carbon nanotubes, nanocarbons, nanotechnology, etc., can solve problems such as difficulty in controlling the shape of single-walled carbon nanotubes, destruction of single-walled carbon nanotubes, etc., and achieve low cost , simple operation, broad application prospects

Active Publication Date: 2013-08-07
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these two types of methods can achieve efficient separation of SWNTs, the former will inevitably introduce damage to SWNTs, while the latter is only suitable for SWNTs with a length of several microns and is difficult to obtain. Controlling the Morphology of Isolated Single-Walled Carbon Nanotubes

Method used

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  • Method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays
  • Method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays
  • Method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Embodiment 1, preparation amino-functionalized and phenyl-functionalized adhesive tape

[0024] 1) Put the microscope slide into a 100ml beaker, ultrasonically in ultrapure water, acetone, ethanol, ultrapure water, and ultrapure water for 10 minutes, dry the slide and beaker in an oven at 120°C and cool to room temperature, Pour the silicone elastomer (the main component is octamethylcyclotetrasiloxane) and the curing agent (the main component is (tetrakis(trimethylsiloxy) silane)) in a mass ratio of 10:1 into the oven Mix in a beaker, stir for 20 minutes and let it stand for 1 hour, then slowly pour it on the surface of the dried glass slide, and bake in an oven at 90°C for 1 hour to obtain a polydimethylsilane film as a support layer with a thickness of 2.5mm.

[0025] 2) Peel off the polydimethylsilane film prepared in step 1) from the glass slide, place the side in contact with the glass slide up in the plasma cleaning machine, and evacuate the system to a vacuum (v...

Embodiment 2

[0031] Embodiment 2, Separation of metal-type and semiconductor-type single-walled carbon nanotube arrays

[0032] Place the amino-functionalized adhesive tapes with numbers 1-6 prepared in Example 1 on the metal-type and semiconductor-type single-walled carbon nanotube arrays on the surface of the alumina substrate (the length of the single-walled carbon nanotubes in the array is 200 Micron) surface, after applying a pressure of 20N for 2 minutes, the amino-functionalized adhesive tape will selectively adhere to the semiconducting single-walled carbon nanotubes. Therefore, an array of metallic single-walled carbon nanotubes is obtained on the surface of the alumina substrate, completing two Separation of Types of Single-Walled Carbon Nanotube Arrays.

[0033] According to the same method as above, only the amino-functionalized tapes numbered 1-6 are replaced with phenyl-functionalized tapes numbered 1-6, and the metal-type monolayer can be selectively adhered by the phenyl-fu...

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Abstract

The invention discloses a method for separating metal-type and semiconductor-type single-walled carbon nanotube arrays. The method comprises the following steps: placing an amino functionalization adhesive tape or a phenyl functionalization adhesive tape on the surfaces of the metal-type and semiconductor-type single-walled carbon nanotube arrays located on a substrate, and pressurizing to obtaina metal-type or semiconductor-type single-walled carbon nanotube array on the substrate to complete the separation. The separation method is applied to separating a single-walled carbon nanotube witha length of hundreds of micrometers, and simultaneously maintaining the feature of the single-walled carbon nanotube well without damaging the type of the required single-walled carbon nanotube. For a sample processed by the amino functionalization adhesive tape, the content of the metal-type single-walled carbon nanotube is 90%; and for a sample processed by the phenyl functionalization adhesivetape, the content of the semiconductor-type single-walled carbon nanotube is 85%. The method provided by the invention is simple to operate, low in cost, applicable to separating the single-walled carbon nanotube array with a large area and wide in application prospect.

Description

technical field [0001] The invention relates to a method for separating metal-type and semiconductor-type single-wall carbon nanotube arrays. Background technique [0002] Single-walled carbon nanotubes have important application value in nanoelectronics because of their excellent properties. However, various growth methods of single-walled carbon nanotubes can only obtain a mixture of metal type and semiconductor type, which largely affects the practical application of single-walled carbon nanotubes. So far, the separation methods of SWNTs can be roughly divided into two categories: selective destruction and solution phase separation. Although these two types of methods can achieve efficient separation of SWNTs, the former will inevitably introduce damage to SWNTs, while the latter is only suitable for SWNTs with a length of several microns and is difficult to obtain. Controlling the morphology of single-walled carbon nanotubes after isolation. Contents of the invention...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/02C01B31/00B82Y40/00C01B32/159
Inventor 张锦洪果
Owner PEKING UNIV