Unlock instant, AI-driven research and patent intelligence for your innovation.

Cooling unit, processing chamber, part in processing chamber, and cooling method

A technology of a cooling mechanism and a cooling method, which is applied in the field of processing chambers and processing chamber components, can solve the problems of increased flow path pressure loss, increased energy consumption of pumps sending out heat medium, and poor temperature control responsiveness, etc., to achieve high-efficiency cooling, Effect of reducing the amount of heat medium

Inactive Publication Date: 2012-08-22
TOKYO ELECTRON LTD
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the cooling by the forced convection heat transfer method, since there is a certain limit to the heat transfer characteristics of the flow path, it is difficult to uniformly cool the semiconductor wafer or the like and the responsiveness of temperature control is poor.
Of course, it can be considered to increase the amount of heat exchange between the heat medium and the cooling unit, and to install fins in the flow path to improve the heat transfer characteristics of the flow path. However, since the heat transfer characteristics of the flow path have an inverse relationship with the pressure loss, the When the heat transfer characteristics of the flow path increase, the pressure loss of the flow path increases, and the energy consumption of the pump that sends out the heat medium increases.
Conversely, when the pressure loss is reduced to save energy, the temperature difference between the input side and the output side of the heat medium increases, the heat transfer characteristics of the flow path deteriorate, and uniform cooling of the semiconductor wafer becomes difficult.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cooling unit, processing chamber, part in processing chamber, and cooling method
  • Cooling unit, processing chamber, part in processing chamber, and cooling method
  • Cooling unit, processing chamber, part in processing chamber, and cooling method

Examples

Experimental program
Comparison scheme
Effect test

Deformed example 1

[0111] Figure 5 It is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus including the cooling mechanism 106 according to Modification 1. FIG. The semiconductor manufacturing apparatus and the cooling mechanism 106 according to Modification 1 have the same configuration as the embodiment, and include a voltage application unit 164 b for applying a voltage to the spray unit 64 . The voltage applying unit 164b is a DC power supply for charging the water sprayed from the spraying unit 64 . When an electric field is generated from the inside of the decompression chamber 60 toward the top surface by the electric field generating power supply 68, a positive potential is applied to the spray part 64, and when an electric field is generated from the top surface of the decompression chamber 60 toward the inside, A negative potential is applied to the spray part 64 .

[0112] In Modification 1, by applying a voltage to the spray unit 64 , t...

Deformed example 2

[0114] Figure 6 It is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus including the cooling mechanism 206 according to Modification 2. The semiconductor manufacturing apparatus and the cooling mechanism 206 according to Modification 2 have the same structure as the embodiment, but differ from the embodiment in that a decompression chamber 260 and The spray unit 264 is configured to cool a desired portion of the inner wall of the processing chamber 201 . A desired place on the inner wall of the processing chamber 201 where cooling is performed may be a part or the entire inner wall. Hereinafter, the above-mentioned difference will be mainly described.

[0115] The processing chamber 201 of the semiconductor manufacturing apparatus according to Modification 2 has a decompression chamber 260 inside the wall for cooling the processing chamber 201 . In addition, for the convenience of drawing, the decompression chamber 260 is forme...

Deformed example 3

[0122] Figure 7 It is a schematic diagram showing a configuration example of a semiconductor manufacturing apparatus including a cooling mechanism 306 according to Modification 3. FIG. The cooling mechanism 306 according to Modification 3 has first and second decompression chambers 360 and 370 for cooling the mounting table 2 and the processing chamber (cooled component) 301 as components to be cooled.

[0123] The first decompression chamber 360 is in the shape of a hollow cylinder, and is fixed at approximately the center of the bottom surface of the processing chamber 301 , and the mounting table 2 is fixed on the top side with a disk-shaped insulator 21 interposed therebetween. The first decompression chamber 360 has the same structure as the decompression chamber 60 described in the embodiment, and the first spray part 364 is provided on the peripheral surface of the first decompression chamber 360 . In addition, the top side of the first decompression chamber 360 is in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a cooling unit and a cooling method, which can reduce thermal medium necessary for vacuum evaporation cooling and efficiently cool a part to be cooled. The cooling unit for cooling a target object to a target temperature includes a decompression chamber (60) thermally connected to the target object; a spraying part (64) which sprays a liquid heat medium having a temperature equal to or lower than the target temperature to an inner surface of the decompression chamber (60); an electric field generator (68) which generates an electric field such that the heat medium sprayed from the spraying part (64) is attached to the inner surface of the decompression chamber (60); and an exhaust part which evacuates the decompression chamber such that a pressure in the decompression chamber is equal to or lower than a saturated vapor pressure of the heat medium at the target temperature.

Description

technical field [0001] The present invention relates to a cooling mechanism and a cooling method that are controlled so as to cool and maintain the temperature of a member to be cooled at a target temperature, and to a processing chamber constituting the cooling mechanism and components within the processing chamber. Background technique [0002] In semiconductor manufacturing equipment, plasma is often used for etching and other processes on a semiconductor wafer as an object to be processed. However, the plasma may unnecessarily heat the semiconductor wafer and the wall surface of the processing chamber to a high temperature. In addition, semiconductor manufacturing apparatuses that require high temperatures when processing semiconductor wafers are also used, but even such apparatuses need to be cooled for other processing such as transportation after processing. Therefore, the semiconductor manufacturing apparatus includes a cooling mechanism for cooling the semiconductor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/3065
CPCH01L21/67017H01L21/67109H01L21/67253H01L21/02H01L21/3065
Inventor 松崎和爱及川纯史永关澄江
Owner TOKYO ELECTRON LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More