White light electrogenerated light-emitting apparatus
An electroluminescent device and electroluminescent technology, applied in the direction of electro-solid devices, luminescent materials, electrical components, etc., can solve the problems of restricting blue light emission, rising device temperature, poor life and stability, etc., so as to improve the luminescence The effect of efficiency
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[0037] Example 1
[0038] A white light-emitting device, its structure is: glass / ITO / MoO 3 / NPB / TCTA / Bepp 2 :Ir(MDQ) 2 (acac) / TCTA / TBADN:BCzVBi / TCTA / Bepp 2 :Ir(ppy) 3 / TPBi / Bphen / Bphen:CsN 3 / Al.
[0039] Regarding the white electroluminescent device in this embodiment, according to its structure, and using vapor deposition technology, each organic functional layer is prepared by vapor deposition in sequence; among them, the composite structure of the light emitting layer: the red light of the red phosphorescent light emitting layer Material is Ir (MDQ) 2 (acac), the doped body is Bepp 2 , The red light material doping ratio is 0.5%, the thickness is 7nm; the material of the first spacer layer is TCTA, the thickness is 2nm; the blue light material of the blue phosphor layer is BCzVBi, the main body is TBADN, and the blue material doping ratio is 10%, The thickness is 10nm; the material of the second spacer layer is TCTA, the thickness is 2nm; the green material of the green phospho...
Example Embodiment
[0046] Example 2
[0047] A white electroluminescent device, the structure of which is: glass / ITO / WO 3 / TPD / TCTA / BeBq 2 :Ir(piq) 2 (acac) / TPD / TPD:BCzVB / TPD / BeBq 2 :Ir(ppy)2(acac) / TAZ / TPBI / Cs 2 CO 3 / Al.
[0048] Regarding the white electroluminescent device in this embodiment, according to its structure, and using vapor deposition technology, each organic functional layer is prepared by vapor deposition in sequence; among them, the composite structure of the light emitting layer: the red light of the red phosphorescent light emitting layer Material is Ir(piq) 2 (acac), the doped body is BeBq 2 , The red light material doping ratio is 5%, and the thickness is 5nm; the material of the first spacer layer is TPD with a thickness of 10nm; the blue light material of the blue phosphor layer is BCzVB, the main body is TPD, and the blue material doping ratio is 20%, The thickness is 20nm; the material of the second spacer layer is TPD, and the thickness is 10nm; the green material of the g...
Example Embodiment
[0049] Example 3
[0050] A white photoluminescence device, the structure of which is: glass / ITO / VO x / TDAPB / NPB / BeqQ 2 :Ir(piq) 3 / NPB / TCTA:TBPe / TDAPB / BeMQ 2 :Ir(ppy) 3 / BND / TPQ / LiF / Al.
[0051] Regarding the white electroluminescent device in this embodiment, according to its structure, and using vapor deposition technology, each organic functional layer is prepared by vapor deposition in sequence; among them, the composite structure of the light emitting layer: the red light of the red phosphorescent light emitting layer Material is Ir(piq) 2 (acac), the doped body is BeqQ 2 , The red light material doping ratio is 4%, the thickness is 15nm; the material of the first spacer layer is NPB, the thickness is 1nm; the blue light material of the blue fluorescent layer is TBPe, the main body is TCTA, the blue material doping ratio is 15%, and the thickness 15nm; the material of the second spacer layer is TDAPB with a thickness of 1nm; the green material of the green phosphorescent laye...
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