Making method of nano film of graphene doped zinc oxide

A nano-film and manufacturing method technology, applied in the direction of electrochemical variables of materials, etc., can solve the problems of expensive, bulky, and time-consuming instruments, and achieve the effects of high controllability and improved sensitivity

Inactive Publication Date: 2012-09-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0003] Currently used for NO 2 Gas detection methods mainly include electrochemical and semiconductor resistive sensor detection. However, most of these methods require expensive instruments, large volume, complex analysis, and time-consuming, which are not suitable for real-time monitoring in the field.

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  • Making method of nano film of graphene doped zinc oxide
  • Making method of nano film of graphene doped zinc oxide
  • Making method of nano film of graphene doped zinc oxide

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] The invention provides a kind of preparation method of the nano film of graphene doping zinc oxide, comprises the following steps:

[0026] Step 1: Utilize graphite, anhydrous sodium nitrate, concentrated sulfuric acid and potassium permanganate to prepare graphite oxide;

[0027] Step 2: using the graphite oxide to prepare graphene;

[0028] Step 3: dissolving the graphene and zinc oxide in ethylene glycol solution, and ultrasonically vibrating to obtain a mixed solution;

[0029] Step 4: use a pipette to absorb the mixed solution and drop-coat it on the sensitive film of the device, and dry it in vacuum to obtain a graphene-doped zinc oxide nano-film.

[0030] In the above step 1, the preparation of graphite ox...

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Abstract

The invention discloses a making method of a nano film of graphene doped zinc oxide. The making method comprises the steps of: preparing graphite oxide by using graphite, anhydrous sodium nitrate, concentrated sulfuric acid and potassium permanganate; preparing graphene by using the graphite oxide; dissolving the graphene and zinc oxide in an ethylene glycol solution, ultrasonically oscillating to obtain a mixture solution; and sucking the mixture solution by using a liquid-moving machine and dropping and coating on a sensitive film of a device, and vacuum-drying to obtain the nano file of the graphene doped zinc oxide. By using the excellent electronic conduction characteristic of the graphene, through change of conductivity, the change of the frequency is changed, and therefore, the purpose of detecting gas is achieved. Due to the adoption of the graphene doped with the zinc oxide, the sensitivity of the sensitive film can be greatly improved. The graphene is synthesized by adopting a chemical dispersal method; the making method has high controllability compared with that of the micro mechanical stripping method; and massive production of the nano film can be carried out.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a method for preparing a graphene-doped zinc oxide nano-film. The method is to use a chemical dispersion method to synthesize graphene and dope zinc oxide to prepare a graphene-doped zinc oxide nano-film , for the detection of low concentrations of NO at room temperature 2 gas. Background technique [0002] NO 2 It is a strong gas, and it is also the main emission gas in thermal power generation and chemical production process. Due to its strong corrosive and physiological stimulating effects, it will cause great harm to building facilities, production equipment and human health. Therefore, for NO 2 It is very important to detect and measure the gas timely and accurately. [0003] Currently used for NO 2 Gas detection methods mainly include electrochemical and semiconductor resistive sensor detection. However, most of these methods require expensive instruments, large v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/30
Inventor 李冬梅周文刘明侯成诚汪幸闫学锋谢常青霍宗亮张满红龙世兵
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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