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Gallium Nitride Wafer Substrates for Solid State Lighting Devices and Associated Systems and Methods

A gallium nitride and substrate technology, applied in the field of wafer production, can solve the problems of producing wafers with a diameter of more than four inches, poor thermal expansion coefficient, etc.

Active Publication Date: 2015-11-25
QROMIS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to differences in the coefficients of thermal expansion (CTE) of the various elements that form the wafers used for SSL fabrication, and in particular due to the CTE of sapphire compared to that of GaN, it can be difficult to produce diameters greater than four in a manner that yields high yields. inch wafer

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  • Gallium Nitride Wafer Substrates for Solid State Lighting Devices and Associated Systems and Methods
  • Gallium Nitride Wafer Substrates for Solid State Lighting Devices and Associated Systems and Methods
  • Gallium Nitride Wafer Substrates for Solid State Lighting Devices and Associated Systems and Methods

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Embodiment Construction

[0016] Embodiments of the invention are generally directed to substrates for growing gallium nitride and associated systems and methods. Gallium nitride can be used to form solid state lighting ("SSL") devices. As used hereinafter, the term "SSL device" generally refers to devices with light-emitting diodes ("LEDs"), organic light-emitting diodes ("OLEDs"), laser diodes ("LDs"), polymer light-emitting diodes ("PLEDs"), and / or or any other suitable source of illumination other than electric filament, plasma or gas. Briefly, one embodiment of the system includes a support substrate, an intermediate structure formed on the support substrate, and a seed material formed on the intermediate structure. For example, an amorphous and / or at least partially crystal-oriented material (eg, silicon with a (111) crystal orientation) is disposed on the seed material by plasma-enhanced chemical vapor deposition (PECVD). The amorphous and / or at least partially crystal-oriented material can be...

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Abstract

Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and / or growing the crystals having the selected orientation.

Description

technical field [0001] The present invention relates generally to wafer fabrication, and more particularly to a substrate, system and method for growing gallium nitride suitable for use in solid state lighting devices. Background technique [0002] Cellular phones, personal digital assistants ("PDAs"), digital cameras, MP3 players, and other portable electronic devices use solid-state lighting ("SSL") devices, such as LEDs, for background lighting. SSL fixtures are also used for signage, interior lighting, exterior lighting, and other types of general lighting. Figure 1A is a cross-sectional view of a conventional SSL device 10a with lateral contacts. As shown in FIG. 1A, SSL device 10a includes a substrate 20 carrying an LED structure 11 having an active region 14 positioned between N-type GaN 15 and P-type GaN 16, such as Contains Gallium Nitride / Indium Gallium Nitride (GaN / InGaN) Multiple Quantum Wells (“MQW”). SSL device 10 a also includes a first contact 17 on P-type...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/16
CPCH01L33/486C30B29/06C30B33/10H01L21/02389H01L21/02447H01L21/0245H01L21/02458H01L21/02488H01L21/02505H01L21/02513H01L21/02516H01L21/0254H01L21/02658H01L33/007H01L33/0079H01L33/16H01L33/32H01S5/32341H01L33/0093
Inventor 安东尼·洛奇特菲尔德休古斯·马查德
Owner QROMIS INC