CMOS (Complementary Metal Oxide Semiconductor) image sensor and production method thereof
A technology of an image sensor and a manufacturing method, applied in the field of semiconductors, can solve the problems of unsatisfactory imaging quality and decreased light absorption efficiency, and achieve the effects of low power consumption, improved absorption efficiency, and enhanced absorption
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[0058] Example one
[0059] Such as Figure 2a to Figure 2c As shown, the present invention provides a method for manufacturing a CMOS image sensor. The method at least includes the following steps:
[0060] Such as Figure 2a As shown, first perform step 1) to provide a semiconductor substrate, the semiconductor substrate is a silicon substrate or has a supporting substrate 201, an insulating buried layer 202 on the supporting substrate 201, and The semiconductor substrate of the top semiconductor layer 203 above the buried insulating layer 202; the photosensitive device 204 and the pixel readout circuit 206 are fabricated in the semiconductor substrate, and an isolation structure 208 between adjacent devices is formed, where when When the semiconductor substrate is a semiconductor substrate with an insulating buried layer, the photosensitive device 204, the pixel readout circuit 206, and the isolation structure 208 are all fabricated in the top semiconductor layer 203. Specifica...
Example Embodiment
[0076] Example two
[0077] Such as Figure 3a to 3b As shown, the present invention provides a CMOS image sensor. The image sensor at least includes: a semiconductor substrate, a photosensitive device 304, a pixel readout circuit 306, an isolation structure 307, a dielectric layer (not shown) and metal wiring (not shown) Show), nano metal particle layer 308.
[0078] The semiconductor substrate is a silicon substrate or a semiconductor substrate having a supporting substrate 301, a buried insulating layer 302 located on the supporting substrate 301, and a top semiconductor layer 303 located on the buried insulating layer 302. Bottom; the material of the top semiconductor layer 303 is a semiconductor material used to make semiconductor devices, including at least any one of silicon, strained silicon, germanium and silicon germanium; the buried insulating layer 302 is a single layer structure or a stacked layer Structure, wherein the material of each layer in the single-layer stru...
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