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CMOS (Complementary Metal Oxide Semiconductor) image sensor and production method thereof

A technology of an image sensor and a manufacturing method, applied in the field of semiconductors, can solve the problems of unsatisfactory imaging quality and decreased light absorption efficiency, and achieve the effects of low power consumption, improved absorption efficiency, and enhanced absorption

Inactive Publication Date: 2012-09-12
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a CMOS image sensor and a manufacturing method thereof, which are used to solve the problems of reduced light absorption efficiency and unsatisfactory imaging quality of the CMOS image sensor in the prior art

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  • CMOS (Complementary Metal Oxide Semiconductor) image sensor and production method thereof
  • CMOS (Complementary Metal Oxide Semiconductor) image sensor and production method thereof
  • CMOS (Complementary Metal Oxide Semiconductor) image sensor and production method thereof

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Embodiment 1

[0059] Such as Figure 2a to Figure 2c As shown, the present invention provides a kind of CMOS image sensor fabrication method, and this method at least comprises the following steps:

[0060] Such as Figure 2a As shown, step 1) is first performed to provide a semiconductor substrate, the semiconductor substrate is a silicon substrate or has a supporting substrate 201, an insulating buried layer 202 on the supporting substrate 201, and a The semiconductor substrate of the top semiconductor layer 203 above the insulating buried layer 202; the photosensitive device 204 and the pixel readout circuit 206 are fabricated in the semiconductor substrate, and the isolation structure 208 between adjacent devices is formed, wherein, when When the semiconductor substrate is a semiconductor substrate with an insulating buried layer, the photosensitive device 204 , the pixel readout circuit 206 and the isolation structure 208 are all fabricated in the top semiconductor layer 203 . Specif...

Embodiment 2

[0077] Such as Figures 3a to 3b As shown, the present invention provides a CMOS image sensor, the image sensor at least includes: a semiconductor substrate, a photosensitive device 304, a pixel readout circuit 306, an isolation structure 307, a dielectric layer (not shown) and metal wiring (not shown) shown), nano metal particle layer 308.

[0078] The semiconductor substrate is a silicon substrate or a semiconductor substrate having a supporting substrate 301, an insulating buried layer 302 on the supporting substrate 301, and a top semiconductor layer 303 on the insulating buried layer 302 Bottom; the material of the top semiconductor layer 303 is a semiconductor material used to make semiconductor devices, including at least any one of silicon, strained silicon, germanium and silicon germanium; the insulating buried layer 302 is a single-layer structure or stacked layers structure, wherein the single-layer structure or the material of each layer in the stacked structure i...

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Abstract

The invention provides a CMOS (Complementary Metal Oxide Semiconductor) image sensor and a production method thereof. Through a nano-metal particle layer formed on the surface of a photosensitive device, or formed in a dielectric layer, or formed in a metal wiring layer, surface plasmon polaritons of the nano-metal particle layer are utilized to enhance the light absorption efficiency of the photosensitive device positioned below the nano-metal particle layer; and by controlling the sizes of nano-metal particles of the nano-metal particle layer, the absorption of specific-wavelength light is enhanced. According to the CMOS image sensor, the absorption efficiency of the CMOS image sensor on originally absorbable band light can be enhanced, and also the absorption efficiency of the image sensor on the long wavelength light with a wavelength between 500nm and 1000nm can be effectively improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a CMOS image sensor and a manufacturing method thereof, in particular to a CMOS image sensor which utilizes surface plasmons of nanometer metal particles to enhance light absorption and a manufacturing method thereof. Background technique [0002] SOI (Silicon-On-Insulator, silicon on insulating substrate) technology introduces a buried oxide layer between the top silicon and the back substrate. By forming a semiconductor thin film on an insulator, SOI material has advantages that cannot be compared with traditional bulk silicon materials: it can realize the dielectric isolation of components in integrated circuits, and completely eliminate the parasitic latch effect in bulk silicon CMOS circuits; using this Integrated circuits made of this material also have the advantages of small parasitic capacitance, high integration density, fast speed, simple process, small short chan...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 田犁汪辉陈杰方娜苗田乐
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI
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