Artificial tooth root with nanostructure

Abstract

The invention relates to an artificial tooth root with a nanostructure. The artificial tooth root comprises a base material and the nanostructure; and the nanostructure comprises a base surface and a plurality of nano dots which are independent and are regularly arranged, wherein the base surface is far away from the surface of the base material, the nano dots are formed from the base surface to the direction far away from the base material, and the average diameter width of the nano dots is 10-90 nm. According to the artificial tooth root provided by the invention, by using the permanent nanostructure which has the average diameter width of 10-90 nm and is applicable to the long-term adhesion and proliferation of bone cells, the problem that materials coated on the surface of the artificial tooth root and the bone cells easily fall off as the materials helping cell proliferation are only coated on the flat surface of the artificial tooth root nowadays is solved.

Description

Technical field

[0001] The invention relates to an artificial tooth root, in particular to an artificial tooth root with a nano structure. Background technique

[0002] In the field of dental repair technology, the way to repair the missing teeth is to grind the natural teeth before and after the missing teeth, and then fix the braces to the front and back natural teeth of the missing teeth to fix the dentures at the missing teeth. The disadvantage of this method is that the healthy natural teeth in the oral cavity have been destroyed before the denture is worn, and if there are multiple consecutive missing teeth, the natural teeth of the fixed denture need to bear the force of multiple dentures during chewing, which is too heavy; Those with full-mouth device movable dentures are prone to malocclusion, inflammation of the dental mucosa, and vomiting. The artificial tooth root currently under development is the use of artificial materials implanted in the mandible to replace the ...

Examples

specific example 1

[0040] The first is to prepare the base material for the silicon wafer.

[0041] Next, a tantalum nitride (TaN) film with a thickness of 200 nm is deposited on the surface of the substrate, and then an aluminum film with a thickness of 400 nm is deposited on the top surface of the tantalum nitride film away from the substrate.

[0042] Next, prepare an electroplating solution and a power supply with two opposite electrodes. The electroplating solution is sulfuric acid with a molar concentration of 1.8M. The substrate on which the tantalum nitride film and the aluminum film are sequentially deposited is placed in the electroplating solution. , The aluminum film is used as an anode electrically connected to one of the electrodes. The power supply is used to give a voltage of 5V, and the aluminum film is anodized by electroplating to form an aluminum oxide film. The structure of the aluminum oxide film is rearranged to have A plurality of holes penetrating the bottom surface of the al...

specific example 2

[0047] The manufacturing process of this specific example 2 is roughly the same as that of the specific example 1. The difference is that the electroplating solution is oxalic acid with a molar concentration of 0.3M, and the power supply is given a voltage of 25V, which can produce an average After the aluminum oxide film with a hole with a diameter of 50 nm undergoes an oxidation reaction on a part of the tantalum nitride film exposed to the hole, the average diameter of each nano-dot is 50 nm and the average height is 50 nm.

[0048] Then, after removing the aluminum oxide film, and forming a reinforced adhesion layer with a thickness of 6 nm and made of platinum as the main material on the surface of the tantalum nitride film and the nanodot film, an artificial tooth root B with a nanostructure is obtained .

specific example 3

[0050] The manufacturing process of this specific example 3 is roughly the same as that of the specific example 1. The difference is that the electroplating solution is oxalic acid with a molar concentration of 0.3M, and the power supply is given a voltage of 100V, which can produce an average After the aluminum oxide film with a hole with a diameter of 90 nm undergoes an oxidation reaction on a part of the tantalum nitride film exposed to the hole, the average diameter of each nano-dot is 90 nm and the average height is 100 nm.

[0051] Then, after removing the aluminum oxide film, and forming a reinforced adhesion layer with a thickness of 6 nm and made of platinum as the main material on the surface of the tantalum nitride film and the nanodot film, an artificial tooth root C with a nanostructure is obtained .

Technical field

[0001] The invention relates to an artificial tooth root, in particular to an artificial tooth root with a nano structure. Background technique

[0002] In the field of dental repair technology, the way to repair the missing teeth is to grind the natural teeth before and after the missing teeth, and then fix the braces to the front and back natural teeth of the missing teeth to fix the dentures at the missing teeth. The disadvantage of this method is that the healthy natural teeth in the oral cavity have been destroyed before the denture is worn, and if there are multiple consecutive missing teeth, the natural teeth of the fixed denture need to bear the force of multiple dentures during chewing, which is too heavy; Those with full-mouth device movable dentures are prone to malocclusion, inflammation of the dental mucosa, and vomiting. The artificial tooth root currently under development is the use of artificial materials implanted in the mandible to replace the ...

Examples

specific example 1

[0040] The first is to prepare the base material for the silicon wafer.

[0041] Next, a tantalum nitride (TaN) film with a thickness of 200 nm is deposited on the surface of the substrate, and then an aluminum film with a thickness of 400 nm is deposited on the top surface of the tantalum nitride film away from the substrate.

[0042] Next, prepare an electroplating solution and a power supply with two opposite electrodes. The electroplating solution is sulfuric acid with a molar concentration of 1.8M. The substrate on which the tantalum nitride film and the aluminum film are sequentially deposited is placed in the electroplating solution. , The aluminum film is used as an anode electrically connected to one of the electrodes. The power supply is used to give a voltage of 5V, and the aluminum film is anodized by electroplating to form an aluminum oxide film. The structure of the aluminum oxide film is rearranged to have A plurality of holes penetrating the bottom surface of the al...

specific example 2

[0047] The manufacturing process of this specific example 2 is roughly the same as that of the specific example 1. The difference is that the electroplating solution is oxalic acid with a molar concentration of 0.3M, and the power supply is given a voltage of 25V, which can produce an average After the aluminum oxide film with a hole with a diameter of 50 nm undergoes an oxidation reaction on a part of the tantalum nitride film exposed to the hole, the average diameter of each nano-dot is 50 nm and the average height is 50 nm.

[0048] Then, after removing the aluminum oxide film, and forming a reinforced adhesion layer with a thickness of 6 nm and made of platinum as the main material on the surface of the tantalum nitride film and the nanodot film, an artificial tooth root B with a nanostructure is obtained .

specific example 3

[0050] The manufacturing process of this specific example 3 is roughly the same as that of the specific example 1. The difference is that the electroplating solution is oxalic acid with a molar concentration of 0.3M, and the power supply is given a voltage of 100V, which can produce an average After the aluminum oxide film with a hole with a diameter of 90 nm undergoes an oxidation reaction on a part of the tantalum nitride film exposed to the hole, the average diameter of each nano-dot is 90 nm and the average height is 100 nm.

[0051] Then, after removing the aluminum oxide film, and forming a reinforced adhesion layer with a thickness of 6 nm and made of platinum as the main material on the surface of the tantalum nitride film and the nanodot film, an artificial tooth root C with a nanostructure is obtained .

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