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Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method

A single crystal silicon ingot and ingot casting furnace technology, which is applied in the field of ingot casting furnace, can solve the problem of consumption of large crystals, and achieve the effect of low comprehensive cost and high conversion efficiency

Active Publication Date: 2012-09-19
SHANDONG DAHAI NEW ENERGY DEV
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Problems solved by technology

[0005] The conversion efficiency and cost of cells made of quasi-monocrystalline silicon wafers are between the above two. The production method is to lay a layer of single crystals at the bottom of the ingot furnace, that is, seedlings. The production of quasi-monocrystalline silicon wafers requires a large amount of crystallization

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  • Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method
  • Ingot furnace suitable for producing monocrystalline silicon ingot with ingot casting method

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Embodiment Construction

[0014] Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention Modifications in equivalent forms all fall within the scope defined by the appended claims of this application.

[0015] Such as figure 1 As shown, an ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method includes a furnace body 1, a silicon melting pot 2, and the silicon melting pot 2 is placed in the furnace body 1; it also includes a rotating screw rod 3, a distance Sensing device 4, argon gas drainage cover 6, adjustable temperature heater 7, adjustable temperature heater 7 is set above the silicon melting pot 2 in the furnace body 1, and th...

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Abstract

The invention discloses an ingot furnace suitable for producing a monocrystalline silicon ingot with an ingot casting method. The ingot furnace comprises a furnace body and a silicon melting furnace in the furnace body, wherein a rotating screw rod positioned above the furnace body extends into the silicon melting furnace; a seed crystal is arranged at the bottom of the rotating screw rod; and the rotating screw rod is provided with a distance sensor for sensing the distance from the bottom of the rotating screw rod to the liquid level of molten silicon in the silicon melting furnace. The ingot furnace disclosed by the invention has the advantages that monocrystalline silicon ingots and monocrystalline silicon type ingots can be produced in the ingot furnace by only one seed crystal without paving the seed crystals at the bottom of the ingot furnace, manufactured products are mainly monocrystalline silicon ingots, only the edges of the manufactured products are monocrystalline silicon type ingots, thus the conversion efficiency of battery sheets manufactured by the monocrystalline silicon ingot is higher, and the composite cost of the monocrystalline silicon ingot is lower than the cost of a monocrystalline silicon ingot manufactured with a straightening method and the cost of a polycrystalline silicon ingot manufactured with an ingot casting method.

Description

technical field [0001] The invention relates to an ingot casting furnace, in particular to an ingot casting furnace suitable for producing monocrystalline silicon ingots by casting ingots. Background technique [0002] In the photovoltaic industry, there are three types of silicon materials used in solar cells: monocrystalline silicon wafers, polycrystalline silicon wafers, and quasi-monocrystalline silicon wafers. [0003] Cells made of monocrystalline silicon wafers have the highest conversion efficiency, but since monocrystalline silicon wafers are cut products from monocrystalline silicon ingots, and the production of monocrystalline silicon ingots requires the Czochralski method and rotating seedlings, Slowly increase the cost to grow rod-shaped single crystal silicon from the single crystal furnace. [0004] Cells made of polycrystalline silicon wafers have the lowest conversion efficiency, but because polycrystalline silicon is produced in an ingot furnace, the produ...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 甘大源陈文杰刘坤
Owner SHANDONG DAHAI NEW ENERGY DEV
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