Transverse double-diffusion MOS (metal oxide semiconductor) device and manufacturing method thereof

Abstract

The invention provides a transverse double-diffusion MOS (metal oxide semiconductor) device and a manufacturing method thereof. The manufacturing method of the transverse double-diffusion MOS device comprises the following steps of: forming a P trap in a substrate; forming a P-type heavily-doped region in the P trap, and forming an N-type drift region in the P trap; forming a source area in the P-type heavily-doped region; forming a drain contact area in the N-type drift region; and depositing a grid oxide and forming a polycrystalline silicon grid. The N-type drift region is formed in the P trap by the following steps of: a first ion step of injecting phosphorus with injection energy of 650keV, a second ion step of injecting phosphorus with injection energy of 450keV, a third ion step of injecting phosphorus with injection energy of 140keV, and a fourth ion step of injecting arsenic with injection energy of 300keV. According to the invention, an output curve, substrate current and drain-source on resistance of the transverse double-diffusion MOS device can be effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for manufacturing a lateral double-diffused metal oxide semiconductor device and a lateral double-diffused metal oxide semiconductor device manufactured thereby. Background technique [0002] A lateral double diffused metal oxide semiconductor (LDMOS) device is a type of semiconductor device known in the art. An LDMOS device is a field effect transistor device that is fairly similar to a conventional field effect transistor (FET) device. Like conventional field effect transistor devices, LDMOS devices include forming a pair of source / drain regions separated by a channel region in a semiconductor substrate, and sequentially forming a gate electrode above the channel region. [0003] However, the difference between LDMOS devices and conventional FET devices is that a pair of source / drain regions in conventional FET devices are made...

AI Technical Summary

Problems solved by technology

[0007] The lateral double-diffused metal oxide semiconductor device formed by the above method is sometimes not ideal in terms of output curve, substrate current, on-resistance between drain and source, etc.

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