Flip-chip type semiconductor luminescent device structure and manufacture method thereof

Abstract

The invention discloses a flip-chip type semiconductor luminescent device structure and a manufacture method thereof. The flip-chip type semiconductor luminescent device structure comprises a supporting base plate, a luminous epitaxial layer and a light-transmitting growth substrate, wherein the luminous epitaxial layer is located on the supporting base plate and is sequentially formed by a p-shaped semiconductor layer, a luminous active layer, an n-shaped semiconductor layer and a buffering layer, and the light-transmitting growth substrate is located on the luminous epitaxial layer. The flip-chip type semiconductor luminescent device structure is characterized in that a regular graphical air interlayer is located between the light-transmitting growth substrate and the luminous epitaxial layer and has optical matching thickness. By means of the graphical air interlayer located between the light-transmitting growth substrate and the luminous epitaxial layer and having the optical matching thickness, the effects of light transmitting and radiation can be achieved.

Description

technical field [0001] The invention belongs to the field of manufacturing semiconductor light emitting devices, and in particular relates to a flip-chip semiconductor light emitting device structure and a manufacturing method thereof. Background technique [0002] In recent years, in order to improve the luminous power and efficiency of III-nitride-based compound semiconductor light-emitting devices, thin-film device technology based on substrate transfer has been developed, such as depositing III-nitride thin films on sapphire substrates by MOCVD, and then transferring III-nitride The nitride film is bonded to the semiconductor or metal substrate by wafer bonding technology or electroplating technology, and then the sapphire substrate is removed by laser lift-off method; or the group III nitride film is deposited on the SiC or Si substrate, and then the group III The nitride film is bonded to the semiconductor or metal substrate by wafer bonding technology or electroplatin...

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Problems solved by technology

[0004] However, different interfaces of the semiconductor layer have different degrees of reflection and absorption of light.

For example: the GaN crystal has a high refractive index, and the light emitted by it inside the crystal of the LED element does not completely pass through but is reflected inside, and is finally absorbed by the material to generate heat; moreover, usually light-emitting diode chips need to use organic materials Encapsulation, accompanied by the heat of this encapsulation material, will cause the quality of light to deteriorate, resulting in the problem of reduced light output

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