Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for manufacturing metallized semiconductor substrates

A semiconductor and metallization technology, applied in the field of manufacturing metallized semiconductor substrates

Active Publication Date: 2016-04-13
GEBR SCHMID GMBH & CO
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] All methods for producing metallized semiconductor substrates have in common that they are problematic from a waste disposal point of view

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for manufacturing metallized semiconductor substrates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The shown device 100 according to the invention comprises five stations A to E. Wafer 101 is guided through all five stations by a roller conveyor system. In station A, a wafer 101 is submerged into a plating bath 102 containing an electrolyte 103 and electrodes 104 . In this plating bath, the surface of the wafer 101 is metallized, ie metal lead-out conductor structures are deposited on the surface. The electrolyte 103 contained in the plating tank 102 is here preferably an aqueous silver electrolyte having a concentration of 5 to 50 grams of silver per liter of water. Fresh electrolyte and additives can be fed into the plating tank 102 through dosing devices 105 , 106 and 107 . The operating temperature of the electrolyte 103 is typically between 25°C and 50°C, ie slightly above room temperature. Thus, small losses continue to occur due to evaporation. In addition, however, electrolyte adhering to the surface of wafer 101 is also carried out of plating bath 102 . ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for producing a metallized semiconductor substrate is described, in which the substrate is immersed in a coating liquid and coated there, preferably in a light-induced or light-assisted manner. Next, the coated substrate is transferred to a rinse unit for the removal of metal residues consisting of electrolyte. In this rinsing device, the substrate is subjected to cascaded rinsing. The metal-containing rinsing medium accumulated here is at least partially fed back into the coating fluid. Furthermore, a device for carrying out this method is also described.

Description

technical field [0001] The invention relates to a multistage method for producing metallized semiconductor substrates, in particular metallized wafers made of silicon, and to a device suitable therefor. Background technique [0002] Known examples of the production of metallized semiconductor substrates are the metallization of wafers, which is understood, for example, within the scope of the method for producing solar cells to apply electrically conductive current extraction (stromabfuehrend) contacts to the front side of the wafer and / or on the dorsal side. On the one hand, these contacts must have a good mechanical and electrical connection to the wafer and, moreover, must have a high intrinsic electrical conductivity and / or a sufficiently high conductor track cross-section. These requirements can be easily met when metallizing the back side of the solar cell, whereas metallizing the front side or light entry side of the solar cell is often problematic in this regard. T...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C25D7/12C25D21/18C25D21/20C25D21/08
CPCC25D7/12C25D21/08C25D21/18C25D21/20C25D17/001H01L21/67173H01L21/6723H01L21/6776
Inventor C·施密德H·卡普勒D·哈贝曼
Owner GEBR SCHMID GMBH & CO