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Polymer containing an aromatic ring for a resist underlayer, and resist underlayer compound including the polymer

A technology of resist lower layer and polymer, which is applied in photosensitive materials used in optomechanical equipment, photoplate-making process of patterned surface, instruments, etc., can solve problems such as high cost

Active Publication Date: 2012-09-26
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods have high cost

Method used

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  • Polymer containing an aromatic ring for a resist underlayer, and resist underlayer compound including the polymer
  • Polymer containing an aromatic ring for a resist underlayer, and resist underlayer compound including the polymer
  • Polymer containing an aromatic ring for a resist underlayer, and resist underlayer compound including the polymer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0110] Synthesis Example 1: Synthesis of a Copolymer of 1-Acenaphthyl-5-yl-Ethanol and Norbornene

Embodiment 1-1

[0111] Synthesis Example 1-1: Synthesis of a copolymer of 1-formyl-naphthalenene and norbornene

[0112] A 5000 mL 3-neck flask with a thermometer, condenser and mechanical stirrer was prepared and immersed in an oil thermostat at 20°C. At constant temperature, the heating plate was stirred by a magnet, and the cooling water temperature of the condenser was set to 5°C. 30.44 g of 0.2 mol of 1-formyl-naphtalene and 56.50 g of 0.6 mol of norbornene were introduced into the reactor and dissolved in 250 mL of 1,2-dichloroethane, and stirred for 30 minute. 2.3 g of 0.01 mol of a polymerization initiator AIBN was slowly introduced thereinto, and reacted for about 12 hours.

[0113] Molecular weights are measured at specific intervals to determine when the reaction is complete. A sample for molecular weight measurement was prepared by taking 1 g of the reactant (resultant); quenching at room temperature; taking 0.02 g of it; and then diluting in a solvent of tetrahydrofuran (THF...

Embodiment 1-2

[0114] Synthesis Example 1-2: Introduction of Substituents

[0115] After completion of the polymerization, the copolymer obtained from Synthesis Example 1-1 was cooled to room temperature, and 8.5 g of 0.071 mol of methylmagnesium bromide was slowly added. While maintaining room temperature, the reaction was allowed to proceed for about 3 hours and was finished with 300 mL of distilled water. Traces of water were removed by magnesium sulfate by washing the organic layer with sufficient water to separate only the organic layer. After filtering the solid, the solvent was completely removed under reduced pressure.

[0116] From the results of weight average molecular weight and polydispersity under tetrahydrofuran measured by GPC, it was confirmed that the polymer represented by the following Chemical Formula 6 (n1:n2 molar ratio=1:2) had a weight average molecular weight of 4,000 and a polydispersity of 1.58. dispersion.

[0117] [chemical formula 6]

[0118]

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Abstract

Provided is a polymer containing an aromatic ring for a resist underlayer, and a resist underlayer compound including the polymer. The polymer containing an aromatic ring comprises a unit structure as expressed in chemical formula 1.

Description

technical field [0001] The present invention relates to an aromatic ring-containing polymer for a resist underlayer and a resist underlayer composition comprising the same. Background technique [0002] In the microelectronics industry and other related industries, including the manufacture of microstructures such as micromotors and magneto-resist heads, there is a constant need to reduce the size of structural profiles. In the microelectronics industry, there is a need to reduce the size of microelectronic devices in order to provide many circuits on a given chip size. [0003] Efficient photolithography is extremely important to achieve dimension reduction of structural profiles. A general photolithography process involves the following processes (procedures). First, a resist is coated on an underlying material and subjected to exposure to radiation to form a resist layer (resist layer). Thereafter, the resist layer is subjected to development to provide a patterned res...

Claims

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Application Information

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IPC IPC(8): G03F7/11
CPCC08F12/22C08F12/00C08F212/32G03F7/091C08F232/08G03F7/11
Inventor 金旼秀田桓承赵诚昱吴丞培宋知胤
Owner CHEIL IND INC