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Memory cell and memory based on organic field effect transistor and method for preparing memory cell

A technology of storage unit and organic field, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc. It can solve the problems of poor flexibility of storage floating gate layer, etc., and achieve low preparation cost, simple preparation process and repeatability Good results

Inactive Publication Date: 2012-10-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the process of realizing the present invention, the applicant realized that the prior art has the following technical defects: the storage floating gate layer formed by the nanocrystalline layer of metal or metal oxide has poor flexibility

Method used

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  • Memory cell and memory based on organic field effect transistor and method for preparing memory cell
  • Memory cell and memory based on organic field effect transistor and method for preparing memory cell
  • Memory cell and memory based on organic field effect transistor and method for preparing memory cell

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Embodiment Construction

[0024] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] In a basic embodiment of the present invention, a memory cell based on an organic field effect transistor is disclosed. The storage unit includes: a conductive substrate; an insulating dielectric layer formed on the conductive substrate; a fullerene layer formed on the insulating dielectric layer; a P-type organic semiconductor layer formed on the fullerene layer; Source and drain on both sides of the organic semiconductor layer.

[0026] In the memory cell based on the organic field-effect transistor provided in this embodiment, since the molecular structure of fullerene is similar to a football, the carriers injected from the P-type organic semiconductor layer can tunnel through the surface of the fullerene stru...

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Abstract

The invention discloses a memory cell and a memory based on organic field effect transistors and a method for preparing the memory cell. According to the memory cell, the unique molecular structure of a fullerene material is utilized, and a single layer fullerene film both as a storage floating-gate layer and a tunneling dielectric layer instead of metals or metal oxides for preparation of the memory cell is used, thereby reducing preparation cost and improving flexibility performance of the memory cell.

Description

Technical field [0001] The present invention relates to the technical field of memory in the semiconductor industry, in particular to a storage unit based on organic field effect transistors, a memory and a preparation method thereof. Background technique [0002] With the continuous deepening of information technology, electronic products have entered every aspect of people's life and work. In daily life, people have an increasing demand for low-cost, flexible, low-weight, and portable electronic products. Traditional devices and circuits based on inorganic semiconductor materials are difficult to meet these requirements. Therefore, organic integrated circuit technologies based on semiconductor materials such as organic polymers and organic small molecules that can achieve these characteristics have gained more and more people under this trend. s concern. Organic field effect transistor memory has a wide range of application prospects in the field of organic electronics. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/05H01L51/40
Inventor 刘明王宏姬濯宇商立伟陈映平王艳花韩买兴刘欣
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI