L-band and S-band ultra-wideband high-power amplitude-limiting low-noise amplifier

Abstract

The invention relates to an L-band and S-ban ultra-wideband high-power amplitude-limiting low-noise amplifier formed by sequentially connecting an amplitude limiting stage, a first amplifying stage and a second amplifying stage. The amplitude limiting stage is designed by adopting bare tube cores of multistage amplitude limiting PIN (positive-intrinsic-negative) tubes and is formed by sequentially connecting a first amplitude limiting PIN tube, a direct current channel inductor, a second amplitude limiting PIN tube and a third amplitude limiting PIN tube over the ground in parallel. The first amplifying stage and the second amplifying stage are the completely same in circuit structure and parameters, a low-noise field-effect transistor is selected, a lumped parameter negative feedback technical design is adopted, and the first amplifying stage and the second amplifying stage respectively comprise the low-noise field-effect transistor, an input coupling capacitor, an output coupling capacitor, a negative feedback circuit and a direct current biasing circuit. The L-band and S-ban ultra-wideband high-power amplitude-limiting low-noise amplifier disclosed by the invention has the advantages of high amplitude limiting power, ultra wideband, low noise, small volume, low cost and the like, and can meet application requirements such as L-band and S-band ultra-wideband communication, radar, electronic countermeasure and measurement.

Description

A technical field [0001] The invention belongs to the technical field of microwave electronic devices, in particular to an L and S band ultra-wideband high-power limiting low-noise amplifier used in ultra-wideband electronic equipment systems. Two background technology [0002] The limiting low noise amplifier is widely used in the front end of the receiver. It integrates the functions of the limiter and the low noise amplifier. Burned by high power input signal. With the development of application requirements and the increasingly complex electromagnetic environment, the working bandwidth of electronic equipment such as communication, radar, electronic countermeasures and measurement is getting wider and wider, and the requirements for high-power protection are getting higher and higher. Noise amplifiers are also in increasing demand. [0003] In the L and S bands, there are many limiting low-noise amplifiers with narrower frequency bands, such as a series of limiting low...

AI Technical Summary

Problems solved by technology

Its internal integrated limiter is made of a level 0402 packaged limiter diode. This packaged limiter diode has limited heat dissipation capacity and large thermal resistance due to the impact of the package, and its own limiter power is small. At the same time The internal limiter of WHM1045LE only uses a first-level limiting diode, so the limiting power of WHM1045LE is small, only 1W, which cannot meet the requirements of high-power limiting protection

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