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Solar battery with superlattices and manufacturing method thereof

A solar cell and superlattice technology, applied in the field of solar cells, can solve the problems of affecting cell performance, reducing minority carrier lifetime, strain and composition fluctuation, etc., and achieve the effect of easily modulating the size of the band gap

Inactive Publication Date: 2015-01-21
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The bulk material of the GaInNAs quaternary system, due to the coexistence of In and N, is prone to strain and component fluctuations, reduces the minority carrier lifetime, and the mobility is not high, and the electron-hole pairs generated by absorbing photons have been collected before being collected. Composite, which limits the current output, and the improvement of conversion efficiency is limited
Although there are solar cells that obtain this bandgap through the superlattice and quantum wells separated by In and N, due to the superlattice with a single barrier layer thickness, misfit dislocations are easily generated when a sufficiently thick active region is obtained , ultimately affecting the performance of the battery

Method used

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  • Solar battery with superlattices and manufacturing method thereof
  • Solar battery with superlattices and manufacturing method thereof

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no. 1 Embodiment approach

[0033] The present invention provides a dilute nitrogen nitride (Dilute Nitride) superlattice solar cell with a superlattice structure.

[0034] The dilute nitride nitride superlattice solar cell with a superlattice structure has a bandgap range of 0.8eV to 1.4eV, includes a substrate layer 201 of Ge or GaAs, and includes a substrate layer of Ge or GaAs GaAs buffer layer 202, GaAs battery, GaAs contact layer 209 and upper contact electrode 210 are sequentially arranged on 201, and lower contact electrode 200 is included on the exposed surface of Ge or GaAs substrate layer 201.

[0035] The GaAs battery includes an AlGaAs back field layer 203, a first GaAs layer 204, an active region 211, a second GaAs layer 207 and an AlGaAs window layer 208 arranged in sequence on the GaAs buffer layer 202 in a direction away from the substrate layer 201, wherein the first GaAs The conductivity doping type of the layer 204 is opposite to that of the second GaAs layer 207 . The conductive dop...

no. 2 Embodiment approach

[0040] The preparation method of the above-mentioned solar cell with superlattice structure is:

[0041] 1) Using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) to sequentially grow a GaAs buffer layer 202, an AlGaAs back field layer 203 and a first GaAs layer 204 on a Ge or GaAs substrate layer 201;

[0042] 2) Two GaNAs / InGaAs short-period superlattice active regions 211 with different well layer thicknesses are grown on the exposed surface of the first GaAs layer 204 by MOCVD or MBE;

[0043]3) On the exposed surface of the superlattice active region 211, the GaAs emission layer 207, the AlGaAs window layer 208 and the GaAs contact layer 209 are epitaxially grown by MOCVD or MBE technology;

[0044] 4) Fabricate an N-type upper contact electrode 210 and a P-type lower contact electrode 200 on the exposed surface of the GaAs contact layer 209 and on the exposed surface of the Ge or GaAs substrate layer 201 .

[0045] An example of the presen...

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Abstract

The invention provides a solar battery with superlattices. The solar battery comprises a first GaAs layer and an active region, wherein the active region is arranged on the naked surface of the first GaAs layer and comprises first and second GaNAs / InGaAs superlattices; the second GaNAs / InGaAs superlattice is arranged on the surface of the first GaNAs / InGaAs superlattice; and the thicknesses of InGaAs layers in the first and second GaNAs / InGaAs superlattices are different. The invention also provides a manufacturing method for the solar battery with the superlattices, two kinds of GaNAs / InGaAs superlattices grow on the naked surface of the first GaAs layer to form the active region, and the thicknesses of the InGaAs layers in the two kinds of GaNAs / InGaAs superlattices are different.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a solar cell with a superlattice structure and a preparation method thereof. Background technique [0002] Since solar energy is inexhaustible and is an effective substitute for traditional fossil energy, research on solar cells is getting deeper and deeper. In the field of solar cells, GaInP / GaAs multi-junction cells have been successfully applied in the field of space photovoltaics, and because of their highest efficiency, they have become an excellent representative of high-power concentrating applications on the ground. In addition, they can form triple-junction cells with Ge to further improve efficiency. . But the bandgap (0.7eV) of Ge is not the most suitable for triple-junction cells. If a 0.8-1.4eV solar cell can be prepared and lattice-matched with GaAs or Ge substrates, the conversion efficiency will be significantly improved, and Ge can be combined to form a four-junction...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/077H01L31/18
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 郑新和李雪飞张东炎吴渊渊陆书龙杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI