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Resistive random access memory unit

A technology of resistive memory and resistive characteristics, applied in static memory, digital memory information, information storage, etc., can solve problems such as insufficient current supply, inability to solve bipolar RRAM crosstalk, etc., to achieve the effect of solving crosstalk

Active Publication Date: 2012-10-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, current rectifier diodes only have unidirectional rectification characteristics and cannot provide sufficient current in the reverse direction. Therefore, the rectifier diode can only be connected in series with unipolar RRAM to solve the crosstalk problem of unipolar RRAM, but cannot Solving Crosstalk Issues with Bipolar RRAM

Method used

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Examples

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no. 1 example

[0053] In this embodiment, the RRAM is a unipolar RRAM with unipolar transition characteristics.

[0054] refer to Figure 4 , Figure 4 It is a schematic diagram of the I-V curve of the unipolar RRAM without any rectifier device connected. The unipolar RRAM starts to be in a high-impedance state. Under a positive scanning voltage with current limiting, when the voltage reaches the set voltage V set , the RRAM changes from a high-resistance state to a low-resistance state, and when the voltage is removed, the RRAM can still maintain a low-resistance state; to the sweep voltage, when the voltage reaches the reset voltage V reset At this time, the device returns to the high-impedance state, and the device remains in the high-impedance state when the voltage is removed. The reading and writing voltage of the unipolar resistive variable memory in the embodiment of the present invention satisfies the following relationship: V read reset set . When the unipolar RRAM is in the h...

no. 2 example

[0060] In this embodiment, the RRAM is a bipolar RRAM with a bipolar transition characteristic.

[0061] refer to Figure 7 , Figure 7 It is a schematic diagram of the I-V curve of the bipolar RRAM without any rectification device connected. The bipolar RRAM starts to be in a high-impedance state. Under the positive scanning voltage (using current-limiting mode), when the voltage reaches the set voltage V set , the RRAM changes from a high-resistance state to a low-resistance state, and when the voltage is removed, the RRAM can still maintain a low-resistance state; unlike the unipolar RRAM in the first example, the bipolar RRAM The erasing operation of variable memory must be realized in the opposite polarity, and a negative scanning voltage is applied across the device. When the scanning voltage reaches the reset voltage V reset At this time, the current value of the device suddenly drops, and the device returns to the high resistance state from the low resistance state. ...

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Abstract

The invention relates to a resistive random access memory unit, which includes: a resistive random access memory and a dual-state resistor, wherein the resistive random access memory is in tandem connection with the dual-state resistor, and the dual-state resistor is a strobing device with a bidirectional asymmetric rectification characteristic. By taking the dual-state resistor as the strobing device, as the dual-state resistor has the bidirectional asymmetric rectification characteristic, sufficient current can be provided under a positive voltage polarity and a negative voltage polarity. At the same time, the dual-state resistor can be used as a strobing device of a unipolar resistive random access memory, and also can be used as a strobing device of a bipolar resistive random access memory, thereby solving the crosstalk problem of bipolar and unipolar resistive random access memory.

Description

technical field [0001] The present invention relates to a semiconductor device and manufacturing technology, and more specifically relates to a resistance variable memory unit. Background technique [0002] With the popularity of portable personal devices, non-volatile memory has gradually become the focus of research and development in the semiconductor industry due to its advantages of maintaining a memory state and operating with low power consumption when there is no power supply. At present, the non-volatile memory on the market is still dominated by flash memory (Flash). Compared with Flash, resistive memory, that is, resistive random access memory (RRAM, Resistiverandom access memory), has advantages in terms of unit area, device density, and power consumption. Power consumption, programming / erasing speed, 3D integration, and multi-value implementation have great advantages in many aspects, and have attracted great attention from large companies and research institute...

Claims

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Application Information

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IPC IPC(8): G11C11/56
Inventor 刘琦刘明龙世兵吕杭炳谢常青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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