Phase change storage material and preparation method thereof

A phase-change storage, antimony-rich technology, applied in the field of memory, can solve the problems of poor thermal stability, weak data retention performance, and low crystallization temperature, and achieve the effects of good data retention, increased crystallization temperature, and improved stability.

Inactive Publication Date: 2012-10-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF4 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a phase-change storage material doped with N-doped antimony-rich Sb-Te and its preparation method, which is used to solve the pro

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change storage material and preparation method thereof
  • Phase change storage material and preparation method thereof
  • Phase change storage material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The inventors of the present invention found that in the existing phase-change memory, widely used Sb-Te series phase-change memory materials have problems such as low crystallization temperature, poor thermal stability, and weak data retention performance.

[0023] Therefore, the inventor of the present invention has improved prior art, has proposed a kind of novel phase-change memory material and preparation method thereof, and described phase-change memory material is in antimony-rich Sb-Te phase-change memory material (Sb x Te, x≥0.5) is doped with N, so that the crystallization temperature of the phase change memory material is greatly increased, and the stability and data retention of the antimony-rich Sb-Te phase change memory device are improved.

[0024] The method accordingly also provides a method for preparing the above-mentioned phase-change memory material.

[0025] The invention will be described in detail below through specific examples.

[0026] The in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a phase change storage material and a preparation method thereof, wherein the phase change storage materials are phase change storage material mixed with stibium-rich Sb-Te, and the chemical general formula of the phase change storage material mixed with stibium-rich Sb-Te is SbxTe, x>=0.5. Compared with the prior art, the phase change storage material mixed with stibium-rich Sb-Te has the advantages of being high in crystallization temperature, good in heat stability, strong in data retention, low in power consumption and the like.

Description

technical field [0001] The invention relates to the field of memory, in particular to an N-doped antimony-rich Sb-Te phase-change memory material applied to memory devices and a preparation method thereof. Background technique [0002] In the semiconductor market, memory (such as DRAM and FLASH) occupies an important seat. With the gradual popularization of portable electronic devices, the market for non-volatile memory will continue to expand, and consumers' requirements for memory capacity and speed will also increase. As the mainstream memory of non-volatile memory, the development of FLASH technology has reached the bottleneck. With the continuous development of integrated circuits, the technical weakness of FLASH has become prominent. The disadvantages of slow writing speed, high writing voltage, and limited number of cycles directly limit its further application. Therefore, a new storage technology is urgently needed to replace it, so that the storage technology can c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00C23C14/06C23C14/35
Inventor 朱敏吴良才宋志棠饶峰彭程
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap