Heating system for single crystal furnace

Abstract

The invention discloses a heating system for a single crystal furnace. The heating system comprises an upper heater and a lower heater, which are arranged in a furnace body, wherein the upper heater and the lower heater are respectively over against the upper part and the lower part of a crucible, are respectively connected with a power supply system, and are respectively shaped like square waves; a gap is available between the lower end of the upper heater and the upper end of the lower heater; the vertical height of the upper heater is larger than that of the lower heater; and a heat insulating plate is arranged in the gap between the lower end of the upper heater and the upper end of the lower heater and extends into the crucible. Through the adoption of a sectional combined heater and a double power supply system, double heaters simultaneously work during fusing, so that silicon fusing time is greatly reduced; after the fusing is finished, the power of the lower heater is reduced; and the upper heater is used as a main heater for the growth of the crystal, so that the bottom temperature of a heat field is reduced without affecting the growth of the crystal and the temperature difference between the top and the bottom of the traditional heat field is reduced.

Description

technical field [0001] The invention relates to the field of single crystal silicon preparation, in particular to a single crystal furnace heating system. Background technique [0002] At present, silicon materials still occupy a dominant position in the field of semiconductors and solar energy. With the development of science and technology, the production process of integrated circuits and solar cells has put forward new requirements for silicon materials. The growth technology of large-diameter and high-quality silicon single crystals has become a research and development hotspot in the field of semiconductor materials and solar energy. [0003] In recent years, silicon material processing technology has made many important progress. One of the most important advances in silicon crystal growth is that the 12-inch silicon single crystal growth technology has matured. The world's major silicon single crystal producers, including Shin-Etsu, SUMCO, MEMC, Wacker, etc., all u...

AI Technical Summary

Problems solved by technology

The size of the COP defect is around 100nm, which already exists in 8-inch silicon wafers, but as the line width becomes smaller than 100nm, this problem becomes more prominent

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