Vertical deposition furnace tube

Abstract

The invention provides a vertical type depositing furnace tube, comprising an outer tube, a multi-branch chamber body, a gas input tube, an exhaust gas discharging tube and a heat-preservation layer, wherein one end of the outer tube is provided with an opening and the other end is closed; the multi-branch chamber body is connected with one end of the outer tube, which is provided with the opening; the side wall of the multi-branch chamber body is provided with mounting through holes for mounting the gas input tube and the exhaust gas discharging tube; the heat-preservation layer is arranged on the inner wall of the multi-branch chamber body; and the heat-preservation layer is provided with holes corresponding to the mounting through holes and is suitable for the gas input tube and the exhaust gas discharging tube to extend to a gas reaction chamber through the mounting through holes and the holes. According to the vertical type depositing furnace tube disclosed by the invention, the heat preservation performance of the vertical type depositing furnace tube is improved by arranging the heat-preservation layer on the multi-branch chamber body, so that uniformity of a thin film formed on the vertical type depositing furnace tube is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a vertical deposition furnace tube. Background technique [0002] In the manufacturing process of semiconductors, it is often necessary to deposit thin films, such as silicon dioxide thin films, on wafers. There are many ways to deposit thin films, and one of the more common methods is chemical vapor deposition. Chemical vapor deposition is to transport the reaction gas to the high-temperature deposition furnace tube to make it react with the wafer in the furnace tube under certain conditions. , to deposit a thin film on the wafer surface. [0003] The deposition furnace tube commonly used in the chemical vapor deposition method is a vertical deposition furnace tube, such as figure 1 As shown, the vertical deposition furnace tube includes an outer tube 101 , an inner tube 102 , a gas reaction chamber 103 , a multi-branch chamber 105 , a gas input tube 107 , an exhaust ga...

AI Technical Summary

Problems solved by technology

However, due to the small number of wafers processed in the same batch by the above method, the cost of forming a silicon dioxide film on the wafer increases, which is not conducive to cost control

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