Method for monitoring homogeneity and stability of F element ion injection process

Abstract

The invention discloses a method for monitoring the homogeneity and the stability of the F element ion injection process, which includes the following steps: providing a wafer, and dividing the wafer into multiple grain regions; selecting one of the grain regions, and injecting a certain dose of F element into the selected gain region; depositing a layer of oxide on the surface of the grain region containing F element ions; performing high temperature annealing process to the grain region, and forming bosses on the surface of the oxide; measuring the perimeters of the bosses in the grain region, and calculating the sum of the perimeters of the bosses; and determining F element of different doses, repeating the steps, and establishing a database system for relation between the perimeter and the F element injection dose. Through the method, the F element ion injection process can be efficiently monitored, and the guarantee is provided for improvement of the performance and yield of the device; and moreover, the damage to the wafer is efficiently lowered, or the recovery utilization ratio is improved, and the cost is saved.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a method for monitoring the uniformity and stability of F element ion implantation process. Background technique [0002] With the development of integrated circuit technology and proportional size reduction, the control of devices is becoming more and more refined. Ion implantation plays a key role in device performance. For example, ion implantation of F element has a great impact on many key electrical parameters. Negative bias Negative Bias Temperature Instability (NBTI: Negative Bias Temperature Instability) is one of them. [0003] Currently for F atomic groups (such as BF 2 ) off-line monitoring is mainly carried out by measuring the value of the sheet resistance Rs, but this method will seriously damage the wafer due to the need to insert the probe into the wafer, and it is difficult to recycle and reuse it. For the off-line monitoring of F atoms, the commonly used metho...

AI Technical Summary

Problems solved by technology

[0003] Currently for F atomic groups (such as BF 2 ) off-line monitoring is mainly carried out by measuring the value of the sheet resistance Rs, but this method will seriously damage the wafer due to the need to insert the probe into the wafer, and it is difficult to recycle and reuse

For the off-line monitoring of F atoms, the commonly used method is to measure the surface roughness of the wafer by a thermal wave measuring instrument. This method requires high precision of the thermal wave measuring instrument, but the thermal wave measuring instrument The laser emitting device of the instrument is a device that is easy to wear and tear, and the emitted laser light is easy to attenuate, causing errors in the actual measurement data

Images