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Lithography system with lens rotation

A technology of lithography system and optical axis, which is applied in the field of lithography system, can solve the problems of complex features, expensive measurement and control system, and increase the total cost of lithography equipment, so as to reduce accuracy requirements, simplify costs, The effect of reducing aggregate demand

Inactive Publication Date: 2012-11-14
MAPPER LITHOGRAPHY IP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of measurement and control system is usually expensive, adding to the overall cost of the lithography setup
Another disadvantage of this known system is that it uses a Lorentzian motor for actuation, which means that electromagnetic scattering fields
Therefore, this characterization complicates if it does not prohibit any combination of such known targeting systems with charged particle beam lithography systems, as is currently done

Method used

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  • Lithography system with lens rotation
  • Lithography system with lens rotation
  • Lithography system with lens rotation

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Embodiment Construction

[0066] figure 1 is a schematic representation of a prior art charged particle system 1 for projecting an image (specifically, an image provided by a control system) onto a target. It includes wafer stage assemblies to which portions of the present invention are particularly directed. In this design, the charged particle system includes: a control system 2, a vacuum chamber 3 containing a charged particle column 4 mounted on a base frame 8, a measurement frame 6, and target positioning systems 9-13. Said target 9 is usually a wafer provided with a charged particle sensitive layer in the plane of the substrate. The target 9 is placed on top of a wafer table 10 which in turn is placed on a chuck 12 and a long stroke drive 13 . Measurement system 11 is connected to metrology frame 6 and provides measurements of the relative positioning of wafer stage 10 and metrology frame 6 . The measuring frame 6 generally has a relatively high mass and is suspended by means of vibration isol...

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PUM

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Abstract

The invention relates to a charged particle based lithography system for projecting an image on a target using a plurality of charged particle beamlets for transferring said image to said target, said system comprising a charged particle column comprising: an electron optical subassembly comprising a charged particle source, a collimator lens, an aperture array, a blanking means and a beam stop for generating a plurality of charged particle beamlets; and a projector for projecting said plurality of charged particle beamlets on said target; said projector being moveably included in the system by means of at least one projector actuator for moving said projector relative to said electron optical subassembly; said projector actuator being included for mechanically actuating said projector and providing said projector with at least one degree of freedom of movement; wherein said degree of freedom relates to a movement around an optical axis of the system.

Description

technical field [0001] The present invention relates to a charged particle based lithography system for projecting an image onto a target, such as a wafer, using a plurality of beamlets to transfer said image to said target, said system comprising a A projector for projecting a plurality of beamlets on the target, and at least one actuator for positioning the projected image and the target relative to each other. Background technique [0002] Such systems are generally known and have the advantage of on-demand manufacturing and possibly lower tooling costs since masks do not have to be used, changed and installed. An example of such a system disclosed in WO2007 / 013802 comprises a charged particle column operating in a vacuum, wherein the charged particle source comprises a charged particle extraction device for generating a plurality of parallel beamlets from said extracted charged particles device, and a plurality of electrostatic lens structures including electrodes. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/20
CPCB82Y10/00H01J37/3177H01J2237/1502H01J37/023B82Y40/00H01J37/10H01J37/317H01J37/20H01J37/22
Inventor J·佩斯特
Owner MAPPER LITHOGRAPHY IP